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Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs

Published online by Cambridge University Press:  06 March 2019

P. M. Adams ,
J. F. Knudsen  and
R. C. Bowman Jr.
P. M. Adams
Affiliation:
The Aerospace Corporation, Los Angeles, CA 90009 A D. Compaan, University of Toledo, Toledo, OH 43606 H. D. Yao, University of Nebraska, Lincoln, NE 68588
J. F. Knudsen
Affiliation:
The Aerospace Corporation, Los Angeles, CA 90009 A D. Compaan, University of Toledo, Toledo, OH 43606 H. D. Yao, University of Nebraska, Lincoln, NE 68588
R. C. Bowman Jr.
Affiliation:
The Aerospace Corporation, Los Angeles, CA 90009 A D. Compaan, University of Toledo, Toledo, OH 43606 H. D. Yao, University of Nebraska, Lincoln, NE 68588
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Extract

Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing.

Type
XI. Thin Film and Semiconductor Characterization by X-Ray Diffraction
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 531 - 541
Copyright
Copyright © International Centre for Diffraction Data 1990

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References

1. Yao, H. and Compaan, A., “Plasmons, Photoluminescence, and Band Gap Narrowing in Very Heavily Doped n-GaAs,” Appl. Phys. Lett. 57, 147–149 (1990).10.1063/1.103967Google Scholar
2. Speriosu, V., Paine, B., Nicolet, M., and Glass, H., “X-Ray Rocking Curve Study of Si-Implanted GaAs, Si, and Ge,”Appl. Phys. Lett. 40, 604–606 (1982).Google Scholar
3. Paine, B. and Speriosu, V., “Non-Linear Strain Effects in Ion-Implanted GaAs,” J. Appl. Phys. 62, 1704–1705 (1987).Google Scholar
4. Paine, B., Hurvitz, N., and Speriosu, V., “Strain in GaAs by Low Dose Ion Implantation,” J. Appl. Phys., 61 1335–1339 (1987).10.1063/1.338112Google Scholar
5. Bai, G., Jamieson, D., Nicolet, M., and Vreeland, T., “Defects Annealing of Si* Implanted GaAs at RT and 100°C,” Mat. Res. Soc. Symp. Proc. 90, 67–72 (1987).Google Scholar
6. Speriosu, V. S., “Kinematical X-Ray Diffraction in Nonuniform Crystalline Films, Strain and Damage Distribution in Ion-Implanted Garnets,” J. Appl. Phys. 52, 6094–6103 (1981).Google Scholar
7. Hubrig, W., Auleytaer, J., and Maciaszek, M., “Changes of X-Ray Topographic Contrast Due to Annealing of Boron-Implanted Silicon,” Phys. Stat. Sol. (A) 36, 205–215 (1976).Google Scholar
8. Larson, B. and Barhost, J., “X-Ray Study of Lattice Strain in Boron Implanted Laser Annealed Silicon,” J. Appl. Phys. 51, 3181–3185 (1980).10.1063/1.328069Google Scholar
9. Dragsdorf, R. D. and Bhalla, C. P., “X-Ray Topography of Ion-Implanted Laser Annealed Si,” in Advances in X-Ray Analysis, Vol. 29, C. Barrett et al., eds, (1986), pp. 381–386.10.1154/S037603080001048XGoogle Scholar
10. Bowman, R. C. Jr., Knudsen, J. F., Adams, P. M., Yao, H. D., and Compaan, A. D., “X-Ray and Raman Topographic Studies of GaAs Implanted with 28Si+ and Pulsed Laser Annealed,” Mat Res. Soc. Symp. Proc. 157, 727–732 (1990).10.1557/PROC-157-727Google Scholar
11. Tekaat, H. and Schwuttke, G., “X-Ray Double Crystal Diffractometer Investigations of Implanted Silicon: D+ and N+” in Advances In X-Ray Analysis, Vol. 15, K. Heinrich et al., eds. (1972), pp. 504–515.Google Scholar
12. Brack, K., Gurey, E., and Schwuttke, G., “Damage Profiles in High Energy C+ Bombarded Silicon,” Crystal Lattice Defects 4, 109–121 (1973).Google Scholar
13. Bonse, V., Hart, M., and Schwuttke, G., “X-Ray Investigation of Lattice Deformations in Silicon Induced Through High Energy Ion Implantation,” Phys. Stat. Sol 33, 361–374 (1969).Google Scholar
14. Wietesca, K., “X-Ray Diffraction Investigation of High Energy α-Particle Damage in Silicon,” Phys. Stat. Sol. (A) 68, 179–185 (1981).10.1002/pssa.2210680124Google Scholar