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High Resolution X-ray Diffraction Measurements of Strain Relaxed SiGe/Si Structures

Published online by Cambridge University Press:  06 March 2019

P. M. Mooney ,
J. L. Jordan-Sweet ,
G. B. Stephenson ,
F. K. LeGoues  and
J. O. Chu
P. M. Mooney
Affiliation:
IBM Research Division, T. J. , Watson Research Center PO Box 218, Yorktown Heights, NY 10598
J. L. Jordan-Sweet
Affiliation:
IBM Research Division, T. J. , Watson Research Center PO Box 218, Yorktown Heights, NY 10598
G. B. Stephenson
Affiliation:
IBM Research Division, T. J. , Watson Research Center PO Box 218, Yorktown Heights, NY 10598
F. K. LeGoues
Affiliation:
IBM Research Division, T. J. , Watson Research Center PO Box 218, Yorktown Heights, NY 10598
J. O. Chu
Affiliation:
IBM Research Division, T. J. , Watson Research Center PO Box 218, Yorktown Heights, NY 10598
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Abstract

Both double-crystal and triple-axis x-ray diffraction techniques have been used to study complex SiGe/Si structures. A novel method for measuring the nucleation activation energy of dislocations in strain relaxed SiGe/Si structures is presented to illustrate the usefulness of these techniques.

Information

Type
III. Applications of Diffraction to Semiconductors and Films
Information
Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 181 - 193
Copyright
Copyright © International Centre for Diffraction Data 1994

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