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X-Ray Diffraction Microscopy of Planar Diffused Junction Structures

Published online by Cambridge University Press:  06 March 2019

J. K. Howard  and
G. H. Schwuttke
J. K. Howard
Affiliation:
International Business Machines Corporation Hopewell Junction, New York
G. H. Schwuttke
Affiliation:
International Business Machines Corporation Hopewell Junction, New York
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Abstract

Basic processing steps utilized in the fabrication of planar silicon devices include (a) substrate preparation, (b) epitaxial deposition, (c) thermal gvowth of silicon dioxide over the entire silicon wafer surface, (d) device pattern formation by photoetching techniques, and (e) diffusion of n-type or p-type elements through the holes to produce localized regions of desired conductivity, A detailed study of the various diffraction phenomena associated with such structures is presented. X-ray topographs of planar transistors show distinct contrast features such as excess diffraction intensity along the silicon oxide/silicon boundary and/or excess diffraction intensity inside the device area. The diffraction phenomena are discussed in terms of reversible elastic deformations, frozen-in lattice deformations, strain fields and imperfections generated by the various processing steps. A technique is presented to measure the sign of the elastic deformations. The phenomenon of stressjumping across semiconductors interfaces is described, and finally the implications of stress-strain relations on junction performance are stated.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 10: Fifteenth Annual Conference on Applications of X-ray Analysis, August 10-12, 1966 , 1966 , pp. 118 - 133
Copyright
Copyright © International Centre for Diffraction Data 1966

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References

1. Lang, A. R., “Studies of Individual Dislocations by X-Ray Diffraction Microradiography,” J. Appl. Phys. 30: 1748, 1959.Google Scholar
2. Schwuttke, G. H., “A New X-Ray Diffraction Microscopy Technique for the Study of Imperfections in Semiconductor Crystals,” J. Appl. Phys. 36: 2712, 1965.Google Scholar
3. Newkirk, J. B., “Method for the Detection of Dislocations in Silicon by X-Ray Extinction Contrast,” Phys. Rev. 110: 1465, 1958.Google Scholar
4. Howard, J. K. and Dobrott, R. D., “A New Scanning-Reflection X-Ray Topographic Method,” Appl. Phys. Letters 7: 101, 1965.Google Scholar
5. Jenkinson, A. F. and Lang, A. R., “X-Ray Diffraction Topographic Studies of Dislocations in Floating-Zone Silicon,” in: Direct Observation of Imperfections in Crystals, Interscience Publishers, New York, 1962, p. 471.Google Scholar
6. Schwuttke, G. H., “Semiconductor Junction Properties As Influenced by Crystallographic Imperfections,” Contract No. AF19 (628)-5059, Scientific Report No, 1, Feb. 15,1965-Feb. 15, 1966.Google Scholar
7. Faust, J. W. Jr., “Factors That Influence the Damaged Layer Caused by Abrasion on Silicon and Germanium,” Electrochem. Tech. 2: 339, 1964.Google Scholar
8. Joyce, B. D. and Baldrey, J. A., “Selective Epitaxial Deposition of Silicon,” Nature 195: 485, 1962.Google Scholar
9. Evitts, H. C., Cooper, H. W., and Flaschen, S. S., “Rates of Formation of Thermal Oxides of Silicon,” J. Elsctrochem. Soc, 111: 688, 1964.Google Scholar
10. Frosch, C. J. and Derick, L., “Surface Protection and Selective Masking during Diffusion in Silicone,“X Electrochem. Soc. 104: 547, 1957.Google Scholar
11. Warner, R. M. and Fordemwalt, J. N., Integrated Circuits: Design Principles and Fabrication, McGraw-Hill, New York, 1965, p. 298.Google Scholar
12. Armstrong, W. J. and Duffy, M. C., “A Closed Tube Technique for Diffusing Impurities into Silicon,” to be published by Electrochem, Tech. Google Scholar
13. Meieran, E. S. and Blech, I. A., “X-Ray Extinction Contrast Topography of Silicon Strained by Thin Surface Films,” J. Appl. Phys. 36: 3162, 1965.Google Scholar
14. Glartg, R., Holmwood, R. A., and Rosenfeld, R. L.,” Determination of Stress in Films on Single Crystalline Silicon Substrates,” Rev. Sci. Instr. 36: 7, 1965.Google Scholar
15. Schwuttke, G. H. and QueJsser, H. J., “X-Ray Observations of Diffusion-Induced Dislocations in Silicon,” J. Appl. Phys. 33: 1540, 1962.Google Scholar
16. Washburn, J., Thomas, G., and Queisser, H. J., “Diffusion-Induced Dislocations in Silicon,”. J. Appl. Phys. 35: 1906, 1964.Google Scholar
1. Joshi, M. L. and Wilhelm, F., “ Diffusion-Induced Imperfections in Silicon, J. Electrochem, Soc. 112: 185, 1965.Google Scholar
18. Wilhelm, F. and Schwuttke, G, H., to be published in Bull. Am. Phys. Soc. Google Scholar
19. Prussin, S., “Generation and Distribution of Dislocations by Solute Diffusion,” J. Appl. Phys. 32: 1876, 1961.Google Scholar
20. Sato, Y. and Arata, H., “Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in Silicon,” Japan. J. Appl. Phys. 3: 511, 1964.Google Scholar
21. Blech, I. A., Meieran, E. S., and Sello, H., “X-Ray Topography of Diffusion-Generated Dislocations in Silicon,” Appl. Phys, Letters 7: 176, 1965.Google Scholar
22. Schwuttke, G. H. and Fairfield, J. M., “Dislocations in Silicon due to Localized Diffusion,” J. Appl. Phys. 37: 4394, 1966.Google Scholar
23. Glang, R., Holmwood, R. A., and Furois, P. C., “Bias Sputtering of Molybdenum Films,” IBM Fast Fishkill Technical Rpt. 22.173.Google Scholar
24. Holmwood, R. A. and Glang, R., “Vacuum Deposited Molybdenum Films,” J. Electrochem. Soc. 112: 827, 1965.Google Scholar
25. Rindner, W., “Resistance of Elastically Deformed Shallow p-n Junctions (1),” J. Appl. Phys. 33: 2479, 1962.Google Scholar
26. Rindner, W. and Braun, I., “Resistance of Elastically Deformed p—n Junctions (11),” J. Appl. Phys. 34: 1958, 1963.Google Scholar
27. Goetzberger, A. and Finch, R. H., “Lowering of Breakdown Voltage of Silicon p-n Junctions by Stress,” J. Appl. Phys. 35: 1851, 1964.Google Scholar
28. Fairfield, J. M. and Schwuttke, G. H., “The Influence of Çrystallographic Defects on Device Performance,” J. Electrochem. Soc. 113: 1229, 1966.Google Scholar
29. Penning, P. and Polder, D., “Anomalous Transmission o£ 3t-Rays in Elastically Deformed Crystals,” Philips Res. Repts, 16: 419, 1961.Google Scholar
30. Bonse, U., “Zum (Contrast an Versetzungen im Roentgenbild, “ Z. Physik 177: 543, 1964.Google Scholar