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    Patil, S.D. Takale, M.V. Navare, S.T. and Dongare, M.B. 2010. Focusing of Hermite-cosh-Gaussian laser beams in collisionless magnetoplasma. Laser and Particle Beams, Vol. 28, Issue. 02, p. 343.

    Wong, Liang Jie and Kärtner, Franz X. 2010. Direct acceleration of an electron in infinite vacuum by a pulsed radially-polarized laser beam. Optics Express, Vol. 18, Issue. 24, p. 25035.

    Holmlid, L. Hora, H. Miley, G. and Yang, X. 2009. Ultrahigh-density deuterium of Rydberg matter clusters for inertial confinement fusion targets. Laser and Particle Beams, Vol. 27, Issue. 03, p. 529.

    Khaydarov, R.T. Biesinbaeva, H.B. Sabitov, M.M. Terentev, V.B. and Tojinazarov, F.M. 2009. Methods for improving characteristics of laser source of ions. Nuclear Fusion, Vol. 49, Issue. 6, p. 065022.

    Sodha, M.S. Mishra, S.K. and Misra, S. 2009. Focusing of dark hollow Gaussian electromagnetic beams in a plasma. Laser and Particle Beams, Vol. 27, Issue. 01, p. 57.

    HORA, HEINRICH 2005. Difference between relativistic petawatt-picosecond laser-plasma interaction and subrelativistic plasma-block generation. Laser and Particle Beams, Vol. 23, Issue. 04,


Application of laser driven fast high density plasma blocks for ion implantation

  • AMIR H. SARI (a1), F. OSMAN (a2), K.R. DOOLAN (a2), M. GHORANNEVISS (a1), H. HORA (a3), R. HÖPFL (a4), G. BENSTETTER (a4) and M.H. HANTEHZADEH (a1)
  • DOI:
  • Published online: 01 December 2005

The measurement of very narrow high density plasma blocks of high ion energy from targets irradiated with ps-TW laser pulses based on a new skin depth interaction process is an ideal tool for application of ion implantation in materials, especially of silicon, GaAs, or conducting polymers, for micro-electronics as well as for low cost solar cells. A further application is for ion sources in accelerators with most specifications of many orders of magnitudes advances against classical ion sources. We report on near band gap generation of defects by implantation of ions as measured by optical absorption spectra. A further connection is given for studying the particle beam transforming of n-type semiconductors into p-type and vice versa as known from sub-threshold particle beams. The advantage consists in the use of avoiding aggressive or rare chemical materials when using the beam techniques for industrial applications.

Corresponding author
Address correspondence and reprint requests to: Heinrich Hora, Department of Theoretical Physics, University of New South Wales, P.O. Box 343, Connesl Point 2221, Sydney, Australia. E-mail:
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Laser and Particle Beams
  • ISSN: 0263-0346
  • EISSN: 1469-803X
  • URL: /core/journals/laser-and-particle-beams
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