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Influence of pulse repetition rate on the average size of silicon nanoparticles deposited by laser ablation

Published online by Cambridge University Press:  28 February 2007

YING-LONG WANG ,
WEI XU ,
YANG ZHOU ,
LI-ZHI CHU  and
GUANG-SHENG FU
YING-LONG WANG
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding, China
WEI XU
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding, China
YANG ZHOU
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding, China
LI-ZHI CHU
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding, China
GUANG-SHENG FU
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding, China
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Abstract

To investigate the influence of pulse repetition rate on the average size of the nanoparticles, nanocrystalline Si films were prepared by pulsed laser ablation in high-purity Ar gas with a pressure of 10 Pa at room temperature, under the pulse repetition rates between 1 and 40 Hz, using a nanosecond laser. Raman, X-ray diffraction spectra, and scanning electron microscopy images show that with increasing pulse repetition rate, the average size of the nanoparticles in the film first decreases and reach its minimum at 20 Hz, and then increases, which may be attributed to the nonlinear dynamics of the laser-ablative deposition. In our experiment conditions, the duration of the ambient restoration, a characteristic parameter being used to distinguish nonlinear or linear region, is about a few seconds from the order of magnitude, which is consistent with the previous experimental observation. More detailed model to explain quantitively the observed effect is under investigation.

Keywords

Laser ablationNanoscale materialsNanosecond laserNanoparticles
Type
Research Article
Information
Laser and Particle Beams , Volume 25 , Issue 1 , March 2007 , pp. 9 - 13
Copyright
© 2007 Cambridge University Press

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