Hostname: page-component-7dd5485656-dk7s8 Total loading time: 0 Render date: 2025-10-30T06:53:33.154Z Has data issue: false hasContentIssue false
  • English
  • Français

Nonthermal transition of GaAs in ultra-intense laser radiation field

Published online by Cambridge University Press:  13 November 2002

TRAIAN DUMITRICĂ  and
ROLAND E. ALLEN
TRAIAN DUMITRICĂ
Affiliation:
Department of Physics, Texas A&M University, College Station, TX 77843, USA
ROLAND E. ALLEN
Affiliation:
Department of Physics, Texas A&M University, College Station, TX 77843, USA
Get access Rights & Permissions [Opens in a new window]

Abstract

Using the technique of tight-binding electron–ion dynamics, we have calculated the response of crystalline GaAs when a femtosecond laser pulse excites 1–20% of the valence electrons. Above a threshold fluence, which corresponds to promotion of about 12% of the valence electrons to the conduction band, the lattice is destabilized and the band gap collapses to zero. This result supports the conclusion that structural changes on a subpicosecond time scale observed in pump-probe experiments are of a nonthermal nature.

Keywords

LaserPhase transitionSemiconductorsUltrafast

Information

Type
Research Article
Information
Laser and Particle Beams , Volume 20 , Issue 2 , April 2002 , pp. 237 - 242
Copyright
© 2002 Cambridge University Press

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable