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CMP Challenges for Advanced Technology Nodes beyond Si

Published online by Cambridge University Press:  09 May 2017

John H Zhang ,
Stan Tsai ,
Charan Surisetty ,
Jody Fronheiser ,
Shariq Siddiqui ,
Steven Bentley ,
Raghuveer Patlolla ,
Donald F. Canaperi ,
Walter Kleemeier  and
Cathy Labelle
John H Zhang*
Affiliation:
GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Stan Tsai
Affiliation:
GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Charan Surisetty
Affiliation:
IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Jody Fronheiser
Affiliation:
GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Shariq Siddiqui
Affiliation:
GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Steven Bentley
Affiliation:
GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Raghuveer Patlolla
Affiliation:
IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Donald F. Canaperi
Affiliation:
IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Walter Kleemeier
Affiliation:
GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
Cathy Labelle
Affiliation:
GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY12203
*
*Email: john.zhang@globalfoundries.com, jnzhang@us.ibm.com
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Abstract

As the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are reviewed in this paper. First we discussed the challenge of the new integration schemes to CMP. Loading effects can result in different growth rates for varying feature sizes, which results in a critical dimension dependent overburden. This makes it more difficult to meet the targets of the CMP process with respect to oxide loss and Ge/SiGe/III-V dishing. Secondly we discuss the challenge for the reduction of the defects during CMP for these new materials. Finally the challenge that is relevant especially for the introduction of III-V materials is studied. During the polishing of III-V materials, toxic gases as well as III-V containing liquid waste will be created. The chemical mechanism of the waste control is discussed.

Keywords

GeAsCMP
Type
Articles
Information
MRS Advances , Volume 2 , Issue 51: Electronic Devices and Materials , 2017 , pp. 2891 - 2902
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Goley, P. S. and Hudait, M. K., Materials 7, 2301(2014).Google Scholar
Alamo, J. A. d., Nature, 479, 317 (2011).Google Scholar
Tiku, S. and Biswas, D., III-V Integrated Circuit Fabrication Technology, (Pan Stanford Publishing, 2016) pp. 1–29; pp.169-190.Google Scholar
Claeys, C. and Simoen, E., in Germanium Based Technologies: From Materials to Devices, Edit by Claeys, C. and Simoen, E., (Elsevier, 2007) pp. 1–5; Vanhellemont, J., Simoen, E., Romandic, I. and Theuwis, A., ibid, pp.41-66.Google Scholar
Grove, A.S., Physics and Technology of Semiconductor Devices, (John Wiley &Sons, 1967) pp. 100–106.Google Scholar
Hill, R., Hobbs, I., Kirsch, P., Whitener, G., Ward, B. and Fortino, B., CMP Users Group Symposium, Albany, May 2013.Google Scholar
Ong, P. and Teugels, L., in Advance in Chemical Mechanical Planarization, Edit by Babu, S. V., (Elsevier, 2016) pp. 119–135.Google Scholar
Waldron, N., Merckling, C., Teugels, L., Ong, P., Sebaai, F., Barla, K., Collaert, N. and Thean, V., Solid State Electronics, 115, 81 (2016).CrossRefGoogle Scholar
Loo, R., Wang, G., Orzali, T., Waldron, N., Merckling, C., Leys, M., Richard, O., Bender, H., Eyben, P., Vandervorst, W. and Caymax, M.. J. Electrochem. Soc. 159(3) H260 (2012).Google Scholar
Bi, X. and Westerhoff, Paul, SNO Conference, Portland, Oregon, (2015).Google Scholar
Bi, X. and Westerhoff, Paul, Environ. Sci.: Nano, 3, 1014(2016).Google Scholar
Matovu, J., Ong, P., Leunissen, L., Krishnan, S. and Babu, S. V., ECS J. Solid. State. Sci. Tech., 2(11), 432 (2013).Google Scholar
Siebert, M., Leunissen, L., Ong, P., Teugels, L., Ibrahim, S. and Huang, K., International Conference on Planarization/CMP Technology, Kobe, Japan, 18(2014).Google Scholar
Peddeti, S., Ong, P., Leunissen, L. and Babu, S. V., Solid State let., 14(7), H254(2011).Google Scholar
Hydrick, J., Park, J., Bai, J., Major, C., Curtin, M., Fiorenz, J., Carroll, M. and Lochtefeld, A., ECS Trans. 16(10), 237(2008).CrossRefGoogle Scholar
Ong, P., Gillot, C., Ansar, S., Noller, B., Li, Y. and Leunissen, L., ICPT 2012, Grenoble, France, 23(2012).Google Scholar
Zhang, J. H., Tseng, W-T, Economikos, L., Fang, Q., Zheng, J., Yang, L., Canaperi, D. F., Lofaro, M., Kim, B., Hu, C. K., Liniger, E. G., Murphy, R., Leo Tai, T. L., Kleemeier, W., Goldberg, C., Muncy, J., Chen, X. and Sampson, R., Mater. Res. Soc. Symp. Proc., 1428, 12–1428-c06-03( 2012).Google Scholar
Zhang, J.H., Huang, H., Greene, A. M., Xie, R., Seo, S-C., Montanini, P., Tseng, W-T., Tsai, S., Malley, M., Fang, Q., Patlolla, R., Koli, D., Guo, D., Canaperi, D. F., Surisetty, C., Wynne, J. E., Kleemeierl, W. and Labelle, C., presented at the 2017 MRS Spring Meeting, Phoenix, AZ, 2017.Google Scholar