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Exponential Conductivity Increase in Strained MoS2 via MEMS Actuation

Published online by Cambridge University Press:  19 June 2019

A. Vidana*
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at El Paso
S. Almeida
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
M. Martinez
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at El Paso
E. Acosta
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at El Paso
J. Mireles Jr.
Affiliation:
Electrical and Computer Engineering Department, Universidad Autonoma de Ciudad Juarez, Chihuahua, Mexico
T. –J. King
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
D. Zubia
Affiliation:
Department of Electrical and Computer Engineering, University of Texas at El Paso
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Abstract

In this work, a poly-Si0.35Ge0.65 microelectromechanical systems (MEMS)- based actuator was designed and fabricated using a CMOS compatible standard process to specifically strain a bi-layered (2L) MoS2 flake and measure its electrical properties. Experimental results of the MEMS-TMDC device show an increase of conductivity up to three orders of magnitude by means of vertical actuation using the substrate as the body terminal. A force balance model of the MEMS-TMDC was used to determine the amount of strain induced in the MoS2 flake. Strains as high as 3.3% is reported using the model fitted to the experimental data.

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Type
Articles
Copyright
Copyright © Materials Research Society 2019 

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