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Local probing of the interfacial strength in InP/Si substructures

Published online by Cambridge University Press:  14 December 2015

Eric Le Bourhis ,
Konstantin Pantzas ,
Gilles Patriarche ,
Anne Talneau ,
Isabelle Sagnes  and
David Troadec
Eric Le Bourhis*
Affiliation:
Institut P’, CNRS - Université de Poitiers – ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France
Konstantin Pantzas
Affiliation:
Institut P’, CNRS - Université de Poitiers – ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Gilles Patriarche
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Anne Talneau
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Isabelle Sagnes
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
David Troadec
Affiliation:
Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Avenue Poincaré, 59652 Villeneuve d'Ascq cedex, France
*
*(Email: Eric.le.bourhis@univ-poitiers.fr)
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Abstract

InP membranes have been bonded oxide mediated onto a patterned and unpatterned Si substrate. Indentation is shown to allow local testing on patterned areas. Both responses on patterned and unpatterned are compared and placed in reference to oxide free bonded membranes. Delamination of the membrane was observed to depend on the presence of patterns in the Silicon substrate. It occurs when the indenting load reached 55 mN for an oxide mediated bonded unpatterned structure and 42 mN for an oxide mediated bonded patterned one. This is in both cases below the value of 80 mN obtained for an oxide free bonded membrane (unpatterned). Weibull analysis of these events yielded a modulus m of magnitude 6 to 10, indicating that delamination fracture is relatively predictable with a weaker resistance obtained in patterned oxide mediated bonding. Delamination of the membrane is the result of constraint of plastic flow by the InP/Si interface. Membrane rotation is induced and increases with the indentation load, until it is sufficient to initiate and propagate an interfacial crack.

Keywords

nano-indentationbondingsemiconducting
Type
Articles
Information
MRS Advances , Volume 1 , Issue 12: Mechanical Behavior and Failure of Materials , 2016 , pp. 779 - 784
Copyright
Copyright © Materials Research Society 2015 

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References

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