Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-24T09:53:20.042Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition

Published online by Cambridge University Press:  16 May 2016

Mei Shen ,
Triratna P. Muneshwar ,
Ken Cadien ,
Ying Y. Tsui  and
Doug Barlage
Mei Shen*
Affiliation:
Deparment of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
Triratna P. Muneshwar
Affiliation:
Department of Chemical and Material Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
Ken Cadien
Affiliation:
Department of Chemical and Material Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
Ying Y. Tsui
Affiliation:
Deparment of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
Doug Barlage
Affiliation:
Deparment of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
*
*(Email: mshen5@ualberta.ca)
Get access

Abstract

Contact metallization is an essential obstacle for utilizing low temperature achievable polycrystalline ZnO in any discrete devices and integrated circuits. To develop ZnO based semiconductor devices with advanced feature of flexibility, transparency and compatibility with low temperature processing, rectifying junctions must be fully developed. In this work, nanoscale polycrystalline ZnO thin films are fabricated with via low temperature (<200 °C) by atomic layer deposition (ALD). A vertical structure of bottom Schottky metallized diode is developed with copper (Cu) sputtered in room temperature. A control of Cu surface oxidation is realized with an in-situ remote plasma treatment. The results indicate that preparation of the copper surface substantially affects the electrical behavior of the diode. Thermal reliability of Cu metallized Schottky diode is subsequently carried out by annealing up to a maximum temperature of 300 °C before it breaks. This work considers the current transport mechanism evolved deviating current vs voltage (I-V) characteristics from conventional thermionic emission theory.

Keywords

Cuthin filmelectrical properties
Type
Articles
Information
MRS Advances , Volume 1 , Issue 50: Electronics and Photonics , 2016 , pp. 3421 - 3427
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Fortunato, E., Barquinha, P., and Martins, R., “Oxide semiconductor thin-film transistors: a review of recent advances.,” Adv. Mater., vol. 24, no. 22, pp. 2945–2986, Jun. 2012.Google Scholar
Shen, M., Afshar, A., Gupta, M., Shoute, G., Cadien, K., Tsui, Y. Y., and Barlage, D., “Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD,” Mater. Res. Soc. Symp. Proc., vol. 1635, pp. 127–132, 2014.Google Scholar
Shen, M., Afshar, A., Tsui, Y. Y., Cadien, K., and Barlage, D. W., “Performance of Nanocrystal ZnO thin film Schottky Contacts on Cu by Atomic Layer Deposition,” to be Publ.Google Scholar
Crowell, C. and Sze, S. M., “Current transport in metal-semiconductor barriers,” Solid. State. Electron., vol. 9, pp. 1035–1048, 1966.Google Scholar
Somvanshi, D., Jit, S., and Member, S., “Mean Barrier Height and Richardson Constant for Pd / ZnO Thin Film-Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method,” vol. 34, no. 10, pp. 1238–1240, 2013.Google Scholar
Rafea, M. A. and Roushdy, N., “Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique,” J. Phys. D-Applied Phys., vol. 42, no. 1, p. 15413, 2009.Google Scholar
Sharma, K. K., De Physique, L., Briand, A., and Meudon, F.-, “Influence of thin inversion layers on Schottky diodes,” vol. 21, no. 1986, pp. 25–33, 1986.Google Scholar
Ambacher, O. and Smart, J., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, no. 6, p. 3222, 1999.Google Scholar
Stratton, R., “Field and thermionic-field emission in Schottky barriers,” vol. 9, pp. 695–707, 1966.Google Scholar
Crowell, C. R., Shore, H. B., and LaBate, E. E., “Surface-state and interface effects in Schottky barriers at n-type silicon surfaces,” J. Appl. Phys., vol. 36, no. 12, pp. 3843–3850, 1965.Google Scholar
Zheng, X. G., Sakurai, Y., Okayama, Y., Yang, T. Q., Zhang, L. Y., Yao, X., Nonaka, K., and Xu, C. N., “Dielectric measurement to probe electron ordering and electron-spin interaction,” J. Appl. Phys., vol. 92, no. 5, pp. 2703–2708, 2002.CrossRefGoogle Scholar