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Solution-Processed and Self-Assembled Monolayer-Treated High-Voltage Organic Thin Film Transistors for Flexible MEMS Integration

Published online by Cambridge University Press:  15 January 2018

Andy Shih  and
Akintunde Ibitayo Akinwande
Andy Shih*
Affiliation:
Department of Electrical Engineering and Computer Science, Microsystems Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Akintunde Ibitayo Akinwande
Affiliation:
Department of Electrical Engineering and Computer Science, Microsystems Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
*
*email: ashih@mit.edu)
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Abstract

We report a 6,13-Bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) solution-processed high-voltage organic thin film transistor (HVOTFT) with a large breakdown voltage of |VDS| > 450 V, a three-fold increase from previous results. An offset channel architecture and an organosilane-based self-assembled monolayer (SAM) treatment were used to achieve large breakdown voltages. Solution-processed HVOTFTs will enable novel high-voltage and flexible applications. Reliability of the HVOTFT under high-field stress was studied in the context of threshold and onset to conduction voltages.

Keywords

thin filmorganicsolution deposition

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Type
Articles
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MRS Advances , Volume 3 , Issue 33: Electronics, Magnetics and Photonics , 2018 , pp. 1877 - 1882
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Copyright
Copyright © Materials Research Society 2018 

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References

REFERENCES

Sirringhaus, H., Adv. Mater, 17, 2411–2425 (2005).Google Scholar
Hong, W.-C., Ku, C.-J., Li, R., Abbaslou, S., Reyes, P., Wang, S.-Y., Li, G., Lu, M., Sheng, K., and Lu, Y., Sci. Rep., 6, 34169 (2016).Google Scholar
Zhao, W., Law, J., Waechter, D., Huang, Z., and Rolands, J. A., Med. Phys., 25, 539–549 (1998).CrossRefGoogle Scholar
Chow, E. M.., Lu, J. P., Ho, J., and Shih, C., Sens. Actuators, A, 130-131, 297–301 (2006).CrossRefGoogle Scholar
Klauk, H. and Zschieschang, U., J. Appl. Phys., 12, 074514 (2007).Google Scholar
Shih, A. and Akinwande, A. I., MRS Adv., 2, 51, 2961–2966 (2017).Google Scholar
Martin, R. A., Da Costa, V. M., Hack, M., and Shaw, J. G., IEEE Trans. Electron Devices, 40, 634–644 (1993).Google Scholar
Brown, R., Jarret, C. P., de Leew, D. M., and Matters, M., Synth. Met., 88, 37–55 (1997).Google Scholar
Shaw, J. G., Hack, M. G., and Martin, R. A., J. Appl. Phys., 69, 2667–2672 (1991).Google Scholar