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Synthesis and Characterization of c-Axis Oriented Zinc Oxide Thin Film and Its Use for the Subsequent Hydrothermal Growth of Zinc Oxide Nanorods

Published online by Cambridge University Press:  01 February 2019

S.F.U. Farhad*
Affiliation:
Solar Energy Conversion and Storage Research Section, Industrial Physics Division, BCSIR Labs, Dhaka1205
N.I. Tanvir
Affiliation:
Solar Energy Conversion and Storage Research Section, Industrial Physics Division, BCSIR Labs, Dhaka1205
M.S. Bashar
Affiliation:
Institute of Fuel Research and Development (IFRD), Dhaka1205, Bangladesh Council of Scientific and Industrial Research (BCSIR), Bangladesh
M. Sultana
Affiliation:
Institute of Fuel Research and Development (IFRD), Dhaka1205, Bangladesh Council of Scientific and Industrial Research (BCSIR), Bangladesh
*
*E-mail: sf1878@my.bristol.ac.uk / Phone: (0088) 01881755767

Abstract

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Oriented ZnO seed layers were deposited by three different techniques, namely, simple drop casting (DC), sol-gel derived dip coating (DPC) and spin coating of ball-milled ZnO powder solution(BMD) for the subsequent growth of vertically aligned ZnO nanorods along the substrate normal. X-ray diffraction (XRD) analyses revealed that ZnO(DC) seed layer exhibit the highest preferential c-axis texturing among the ZnO seed layers synthesized by different techniques. The Scanning Electron Microscopy (SEM) analysis evident that the morphology of ZnO seed layer surface is compact and coherently carpets the underlying substrate. ZnO nanorods(NRs) were then grown by hydrothermal method atop the ZnO seeded and non-seeded substrates grown by different techniques to elucidate the best ZnO seed layer promoting well-aligned ZnO Nanorods. The presence of c-axis oriented ZnO(DC) seeding layers was found to significantly affect the surface morphology and crystallographic orientation of the resultant ZnO NRs films. The optical band gap of ZnO(DC) seed and ZnO NRs were estimated to be 3.30 eV and in the range of 3.18 – 3.25 eV respectively by using UV-VIS-NIR diffuse reflection spectroscopy. The room temperature photoluminescence analyses revealed that nanostructured ZnO films exhibit a sharp near-band-edge luminescence peak at ∼380 nm consistent with the estimated optical band gap and the ZnO nanorod arrays are notably free from defect-related green-yellow emission peaks.

Type
Articles
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
Copyright © Materials Research Society 2019

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