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Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

Published online by Cambridge University Press:  31 January 2011

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Abstract

The prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

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Research Article
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Copyright © Materials Research Society 2009

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References

1Suntola, T., in Handbook of Crystal Growth (North-Holland, NY, 1994) vol. 3, c. 14 pp. 605663.Google Scholar
2George, S.M., Otto, A.W., Klaus, J.W., J. Phys. Chem. 100, 13121 (1996).Google Scholar
3Puurunen, R.L., J. Appl. Phys. 97, 121301 (2005).Google Scholar
4Suntola, T., Antson, J., U.S. Patent 4,058,430 (1975).Google Scholar
5Kim, H., McIntyre, P.C., J. Korean Phys. Soc. 48, 5 (2006).Google Scholar
6Copel, M., Gribelyuk, M., Gusev, E., Appl. Phys. Lett. 76, 436 (2000).Google Scholar
7Perkins, C.M., Triplett, B.B., McIntyre, P.C., Saraswat, K.C., Haukka, S., Tuominen, M., Appl. Phys. Lett. 78, 2357 (2001).Google Scholar
8Bardeen, J., Brattain, W.H., Phys. Rev. 74, 230 (1948).Google Scholar
9Seidenberg, P., in Facets: New Perspectives on the History of Semiconductors, Goldstein, A., Aspray, W., Eds. (IEEE Press, New Brunswick, NJ, 1997) pp. 3674.Google Scholar
10Orton, J.W., The Story of Semiconductors (Oxford University Press, 2004), pp. 8889.Google Scholar
11Derrick, L., Frosch, C.J., U.S. Patent 2,802,760 (1955).Google Scholar
12Atalla, M., Tannenbaum, E., Schreiber, E.J., Bell System Technical Journal 38, 749 (1959).Google Scholar
13Kilby, J.S., U.S. Patent 3,138,743 (1964).Google Scholar
14Noyce, R.N., U.S. Patent 2,981,877 (1961).Google Scholar
15Gregory, O.J., Pruitt, L.A., Crisman, E.E., Roberts, C., Stiles, P.J., J. Electrochem. Soc. 135, 923 (1988).Google Scholar
16Hymes, D.J., Rosenberg, J.J., J. Electrochem. Soc. 135, 961 (1988).Google Scholar
17Martin, S.C., Hitt, L.M., Rosenberg, J.J., IEEE Electron Device Lett. 10, 325 (1989).Google Scholar
18Randolph, M., Meiners, L.G., J. Electrochem. Soc. 136, 2699 (1989).Google Scholar
19Craciun, V., Boyd, I.W., Hutton, B., Williams, D., Appl. Phys. Lett. 75, 1261 (1999).Google Scholar
20Johnson, R.S., Niimi, H., Lucovsky, G., J. Vac. Sci. Technol., A 18, 1230 (2000).Google Scholar
21Rand, M.J., Ashworth, J.L., J. Electrochem. Soc. 113, 48 (1966).Google Scholar
22Sedgwick, T.O., J. Appl. Phys. 39, 5066 (1968).Google Scholar
23Nagai, H., Niimi, T., J. Electrochem. Soc. 115, 671 (1968).Google Scholar
24Yashiro, T., J. Electrochem. Soc. 119, 780 (1972).Google Scholar
25Wang, K.L., Gray, P. V., J. Electrochem. Soc. 123, 1392 (1976).Google Scholar
26Jack, M.D., Lee, J.Y.M., Lefevre, H., J. Electron. Mater. 10, 571 (1981).Google Scholar
27Benamara, Z., Tizi, S., Chellali, M., Gruzza, B., Mater. Chem. Phys. 62, 273 (2000).Google Scholar
28Shang, H., Lee, K.-L., Kozlowski, P., D'Emic, C., Babich, I., Sikorski, E., Ieong, M., IEEE Electron Device Lett. 25, 135 (2004).Google Scholar
29Khakifirooz, A., Antoniadis, D.A., IEEE IEDM Tech. Dig. 667 (2006).Google Scholar
30Lundstrom, M.S., IEEE Electron Device Lett. 22, 293 (2001).Google Scholar
31Schlom, D.G., Guha, S., Datta, S., MRS Bull. 33, 1017 (2008).Google Scholar
32Chui, C.O., Ramanathan, S., Triplett, B.B., McIntyre, P.C., Saraswat, K.C., IEEE Electron Device Lett. 23, 473 (2002).Google Scholar
33Chui, C.O., Kim, H., Chi, D., Triplett, B.B., McIntyre, P.C., Saraswat, K.C., IEEE International Electron Devices Meeting (IEDM) Tech. Dig. 437 (2002).Google Scholar
34Chui, C.O., Kim, H., Chi, D., McIntyre, P.C., Saraswat, K.C., IEEE Trans. Electron Devices 53, 1509 (2006).Google Scholar
35Kamata, Y., Mater. Today 11, 30 (2008).Google Scholar
36Prabhakaran, K., Ogino, T., Surf. Sci. 325, 263 (1995).Google Scholar
37Prabhakaran, K., Maeda, F., Watanabe, Y., Ogino, T., Appl. Phys. Lett. 76, 2244 (2000).Google Scholar
38Amy, S.R., Chabal, Y.J., in Advanced Gate Stacks for High-Mobility Semiconductors, Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M., Eds. (Springer, Berlin, 2007), pp. 73112.Google Scholar
39Chui, C.O., Kim, H., McIntyre, P.C., Saraswat, K.C., IEEE Electron Device Lett. 25, 274 (2004).Google Scholar
40Kim, H., McIntyre, P.C., Chui, C.O., Saraswat, K.C., Cho, M.H., Appl. Phys. Lett. 85, 2902 (2004).Google Scholar
41Delabie, A., Puurenen, R.L., Brijs, B., Caymax, M., Conrad, T., Onsia, B., Richard, O., Vandervorst, W., Zhao, C., Heyns, M.M., Meuris, M., Viitanen, M.M., Brongersma, H.H., de Ridder, M., Goncharova, L.V., Garfunkel, E., Gustafsson, T., Tsai, W., J. Appl. Phys. 97, 064104 (2005).Google Scholar
42Frank, M.M., Koester, S.J., Copel, M., Ott, J.A., Paruchuri, V.K., Shang, H., Loesing, R., Appl. Phys. Lett. 89, 112905 (2006).Google Scholar
43Delabie, A., Brunco, D.P., Conard, T., Franquet, A., Richard, O., Sioncke, S., Vandervorst, W., Van Elshocht, S., Heyns, M., Meuris, M., Kim, E., Saraswat, K.C., McIntyre, P.C., LeBeau, J.M., Cagnon, J., Stemmer, S., Tsai, W., J. Electrochem. Soc. 155, H937 (2008).Google Scholar
44Sugawara, T., Oshima, Y., Sreenivasan, R., McIntyre, P.C., Appl. Phys. Lett. 90, 112912 (2007).Google Scholar
45Kim, K.H., Gordon, R.G., Ritenour, A., Antoniadis, D.A., Appl. Phys. Lett. 90, 212104 (2007).Google Scholar
46Kim, H., Chui, C.O., Saraswat, K.C., McIntyre, P.C., Appl. Phys. Lett. 83, 2647 (2003).Google Scholar
47Oh, J., Majhi, P., Kang, C.Y., Yang, J.-W., Tseng, H.-H., Jammy, R., Appl. Phys. Lett. 90, 202102 (2007).Google Scholar
48Oh, J., Majhi, P., Tseng, H.-H., Jammy, R., Kelly, D.Q., Banerjee, S.K., Campbell, J.C., Thin Solid Films 516, 4107 (2008).Google Scholar
49Ritenour, A., Hennessy, J., Antoniadis, D.A., IEEE Electron Device Lett. 28, 746 (2007).Google Scholar
50Cheng, C.-C., Chien, C.-H., Luo, G.-Li., Liu, J.-C., Kei, C.-C., Liu, D.-R., Hsiao, C.-N., Yang, C.-H., Chang, C.-Y., J. Electrochem. Soc. 155, G203 (2008).Google Scholar
51Stemmer, S., J. Vac. Sci. Technol., B 22, 791 (2004).Google Scholar
52Kim, H., McIntyre, P.C., Chui, C.O., Saraswat, K.C., Stemmer, S., J. Appl. Phys. 96, 3467 (2004).Google Scholar
53Tsai, W., Carter, R.J., Nohira, H., Caymax, M., Conard, T., Cosnier, V., DeGendt, S., Heyns, M., Petry, J., Richard, O., Vandervorst, W., Young, E., Zhao, C., Maes, J., Tuominen, M., Schulte, W.H., Garfunkel, E., Gustafsson, T., Microelectron. Eng. 65, 259 (2003).Google Scholar
54Dimoulas, A., Vellianitis, G., Mavrou, G., Evangelou, E.K., Sotiropoulos, A., Appl. Phys. Lett. 86, 223507 (2005).Google Scholar
55Puurunen, R.L., Appl. Surf. Sci. 245, 6 (2005).Google Scholar
56Puurunen, R.L., J. Appl. Phys. 95, 4777 (2004).Google Scholar
57Green, M.L., Ho, M.-Y., Busch, B., Wilk, G.D., Sorsch, T., Conard, T., Brijs, B., Vandervorst, W., Räisänen, P.I., Muller, D., Bude, M., Grazul, J., J. Appl. Phys. 92, 7168 (2002).Google Scholar
58Puurunen, R.L., Chem. Vap. Deposition 11, 79 (2005).Google Scholar
59Kim, J., McVittie, J., Saraswat, K., Nishi, Y., Solid State Phenom. 134, 33 (2008).Google Scholar
60Lu, N., Bai, W., Ramirez, A., Mouli, C., Ritenour, A., Lee, M.L., Antoniadis, D., Kwong, D.L., Appl. Phys. Lett. 87, 051922 (2005).Google Scholar
61Zimmerman, P., Nicholas, G., De Jaeger, B., Kaczer, B., Stesmans, A., Ragnarsson, L-Å., Brunco, D.P., Leys, F.E., Caymax, M., Winderickx, G., Opsomer, K., Meuris, M., Heyns, M.M., IEEE IEDM Tech. Dig. 655 (2006).Google Scholar
62Whang, S.J., Lee, S.J., Gao, F., Wu, N., Zhu, C.X., Pan, J.S., Tang, L.J., Kwong, D.L., IEEE IEDM Tech. Dig. 307 (2004).Google Scholar
63Fukuda, Y., Ueno, T., Hirono, S., Hashimoto, S., Jpn. J. Appl. Phys. 44, 6981 (2005).Google Scholar
64Robertson, J., Solid State Electron. 49, 283 (2005).Google Scholar
65Maeda, T., Nishizawa, M., Morita, Y., Takagi, S., Appl. Phys. Lett. 90, 072911 (2007).Google Scholar
66Delabie, A., Bellenger, F., Houssa, M., Conard, T., Van Elshocht, S., Caymax, M., Heyns, M., Meuris, M., Appl. Phys. Lett. 91, 082904 (2007).Google Scholar
67Kuzum, D., Krishnamohan, T., Pethe, A.J., Okyay, A.K., Oshima, Y., Sun, Y., McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C., IEEE Electron Device Lett. 29, 328 (2008).Google Scholar
68Kamata, Y., Kamimuta, Y., Ino, T., Nishiyama, A., Jpn. J. Appl. Phys. 44, 2323 (2005).Google Scholar
69Kita, K., Takahashi, T., Nomura, H., Suzuki, S., Nishimura, T., Toriumi, A., Appl. Surf. Sci., 254, 6100 (2008).Google Scholar
70Chi, D., Chui, C.O., Saraswat, K.C., Triplett, B.B., McIntyre, P.C., J. Appl. Phys. 96, 813 (2004).Google Scholar
71Vitkavage, D.J., Fountain, G.G., Rudder, R.A., Hattangady, S.V., Markunas, R.J., Appl. Phys. Lett. 53, 692 (1988).Google Scholar
72Bai, W.P., Lu, N., Kwong, D.-L., IEEE Electron Device Lett. 26, 378 (2005).Google Scholar
73Shang, H., Frank, M.M., Gusev, E.P., Chu, J.O., Bedell, S.W., Guarini, K.W., Ieong, M., IBM J. Res. Dev. 50, 377 (2006).Google Scholar
74Meuris, M., De Jaeger, B., Van Steenbergen, J., Bonzom, R., Caymax, M., Houssa, M., Kaczer, B., Leys, F., Martens, K., Opsomer, K., Pourghaderi, A.M., Satta, A., Simoen, E., Terzieva, V., Van Moorhem, E., Winderickx, G., Loo, R., Clarysse, T., Conard, T., Delabie, A., Hellin, D., Janssens, T., Onsia, B., Sioncke, S., Mertens, P.W., Snow, J., Van Elshocht, S., Vandervorst, W., Zimmerman, P., Brunco, D., Raskin, G., Letertre, F., Akatsu, T., Billon, T., Heyns, M., Advanced Gate Stacks for High-Mobility Semiconductors, Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M., Eds. (Springer, Berlin, 2007), pp. 333340.Google Scholar
75Chui, C.O., Ito, F., Saraswat, K., IEEE Trans. Electron Devices 53, 1501 (2006).Google Scholar
76Chui, C.O., Gopalakrishnan, K., Griffin, P.B., Plummer, J.D., Saraswat, K.C., Appl. Phys. Lett. 83, 3275 (2003).Google Scholar
77Stesmans, A., Afanas'ev, V.V., in Advanced Gate Stacks for High-Mobility Semiconductors, Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M., Eds. (Springer, Berlin, 2007), pp. 211228.Google Scholar
78Kuzum, D., Pethe, A., Krishnamohan, T., Oshima, Y., Sun, Y., McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C., IEEE IEDM Tech. Dig. 723 (2007).Google Scholar
79Handbook and Chemistry and Physics, 33rd edition (Chemical Rubber Publishing, Cleveland, 1952), p. 498.Google Scholar
80Van Elshocht, S., Brijs, B., Caymax, M., Conrad, T., Chiarella, T., DeGendt, S., De Jaeger, B., Kubicek, S., Meuris, M., Onsia, B., Richard, O., Teerlinck, I., Van Steenbergen, J., Zhao, C., Heyns, M., Appl. Phys. Lett. 85, 3824 (2004).Google Scholar
81Matsubaru, T. H., Sasada, T., Takenaka, M., Takagi, S., Appl. Phys. Lett. 93, 032104 (2008).Google Scholar
82Houssa, M., Pourtois, G., Caymax, M., Meuris, M., Heyns, M.M., Afanas'ev, V.V., Stesmans, A., Appl. Phys. Lett. 93, 161909 (2008).Google Scholar
83Oshima, Y., Sun, Y., Kuzum, D., Sugawara, T., Saraswat, K.C., Pianetta, P., McIntyre, P.C., J. Electrochem. Soc. 155, G304 (2008).Google Scholar
84Oshima, Y., Shandalov, M., Sun, Y., Pianetta, P., McIntyre, P.C., Appl. Phys. Lett., 94, 183102 (2009).Google Scholar
85Sugawara, T., Sreenivasan, R., McIntyre, P.C., J. Vac. Sci. Technol., B 24, 2442 (2006).Google Scholar
86Takagi, S., Microelectron. Eng. 84, 2314 (2007).Google Scholar
87Weber, J.R., Janotti, A., Rinke, P., Van de Walle, C.G., Appl. Phys. Lett. 91, 142101 (2007).Google Scholar
88Ho, M.-T., Wang, Y., Brewer, R.T., Wielunski, L.S., Chabal, Y.J., Moumen, N., Boleslawski, M., Appl. Phys. Lett. 87, 133103 (2005).Google Scholar
89Afanas'ev, V.V., Stesmans, A., Delabie, A., Bellenger, F., Houssa, M., Meuris, M., Appl. Phys. Lett. 92, 022109 (2008).Google Scholar
90Gatos, H.C., Lagowski, J., Kazior, T.E., Jpn. J. Appl. Phys. Suppl. 22, 11 (1983).Google Scholar
91Ikoma, T., Yokomizo, H., Tokuda, H., Jpn. J. Appl. Phys. Suppl. 18, 131 (1979).Google Scholar
92Sawada, T., Hasegawa, H., Thin Solid Films 56, 183 (1979).Google Scholar
93Wilmsen, C., Ed., Physics and Chemistry of III–V Compound Semiconductor Interfaces (Plenum, New York, 1985).Google Scholar
94Wieder, H.H., J. Vac. Sci. Technol., B 11, 1331 (1993).Google Scholar
95Spicer, W.E., Lindau, I., Pianetta, P., Chye, P.W., Garner, C.M., Thin Solid Films 56, 1 (1979).Google Scholar
96Heime, K., InGaAs Field Effect Transistors, (Research Studies Press, Taunton, Somerset, England, 1989).Google Scholar
97MRS Bull. 27 (3) (2002).Google Scholar
98Briggs, D., Grant, J.T., Eds., Surface Analysis by Auger and X-ray Photoelectron Spectroscopy (IM Publications and Surface Spectra Limited, Cromwell Press, Trowbridge, UK, 2003).Google Scholar
99Huang, M.L., Chang, Y.C., Chang, C.H., Lee, Y.J., Chang, P., Kwo, J., Wu, T.B., Hong, M., Appl. Phys. Lett. 87, 252104 (2005).Google Scholar
100Stiles, K., Mao, D., Kahn, A., J. Vac. Sci. Technol. B 6, 1170 (1988).Google Scholar
101Winn, D.L., Hale, M.J., Grassman, T.J., Kummel, A.C., Droopad, R., Passlack, M., J. Chem. Phys. 126, 084703 (2007).Google Scholar
102Chiang, T.T., Spicer, W.E., J. Vac. Sci. Technol. A 7, 724 (1989).Google Scholar
103Spicer, W.E., Newman, N., Spindt, C.J., Liliental-Weber, Z., Weber, E.R., J. Vac. Sci. Technol. A 8, 2084 (1990).Google Scholar
104Hinkle, C.L., Sonnet, A.M., Vogel, E.M., McDonnell, S., Hughes, G.J., Milojevic, M., Lee, B., Aguirre-Tostado, F.S., Choi, K.J., Kim, J., Wallace, R.M., Appl. Phys. Lett. 91, 163512 (2007).Google Scholar
105Hinkle, C.L., Sonnet, A.M., Vogel, E.M., McDonnell, S., Hughes, G.J., Milojevic, M., Lee, B., Aguirre-Tostado, F.S., Choi, K.J., Kim, H.C., Kim, J., Wallace, R.M., Appl. Phys. Lett. 92, 071901 (2008).Google Scholar
106Hollinger, G., Skheyta-Kabbani, R., Gendry, M., Phys. Rev. B 49, 11159 (1994).Google Scholar
107Tereshchenko, O.E., Paget, D., Chiaradia, P., Bonnet, J.E., Wiame, F., Taleb-Ibrahimi, A., Appl. Phys. Lett. 82, 4280 (2003).Google Scholar
108Sun, Y., Pianetta, P., Chen, P.-T., Kobayashi, M., Nishi, Y., Goel, N., Garner, M., Tsai, W., Appl. Phys. Lett. 93, 194103 (2008).Google Scholar
109Ingrey, S.I.J., Lau, W.M., Sodhi, R.N.S., J. Vac. Sci. Technol. A 7, 1554 (1989).Google Scholar
110Lau, W.M., Sodhi, R.N.S., Jin, S., Ingrey, S., Puetz, N., Springthorpe, A., J. Appl. Phys. 67, 768 (1990).Google Scholar
111Thomas, J.H. III, Koganowicz, G., Robinson, J.W., J. Electrochem. Soc. 135, 1201 (1988).Google Scholar
112Pearton, S.J., Ren, F., Abernathy, C.R., Hobson, W.S., Fullowan, T.R., Esagui, R., Lothian, J.R., Appl. Phys. Lett. 61, 586 (1992).Google Scholar
113Aguirre-Tostado, F.S., Milojevic, M., Hinkle, C.L., Vogel, E.M., Wallace, R.M., McDonnell, S., Hughes, G.J., Appl. Phys. Lett. 92, 171906 (2008).Google Scholar
114Orton, J.M., Cordier, Y., Garcia, J.C., Adam, D., Grattepain, C., Jpn. J. Appl. Phys. 35, 5964 (1996).Google Scholar
115O'Connor, E., Long, R.D., Cherkaoui, K., Thomas, K.K., Chalvet, F., Povey, I.M., Pemble, M.E., Hurley, P.K., Brennan, B., Hughes, G., Newcomb, S.B., Appl. Phys. Lett. 92, 022902 (2008).Google Scholar
116Ye, P.D., Wilk, G.D., Yang, B., Kwo, J., Chu, S.N.G., Nakahara, S., Gossmann, H.-J.L., Mannaerts, J.P., Hong, M., Ng, K.K., Bude, J., Appl. Phys. Lett. 83, 180 (2003).Google Scholar
117Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J., IEEE Electron Device Lett. 24, 209 (2003).Google Scholar
118Hong, M.W., Kwo, J.R., Tsai, P.J., Chang, Y.C., Huang, M.L., Chen, C.P., Lin, T.D., Jpn. J. Appl. Phys., Part 1 46, 3167 (2007).Google Scholar
119Frank, M.M., Wilk, G.D., Starodub, D., Gustafsson, T., Garfunkel, E., Chabal, Y.J., Grazul, J., Muller, D.A., Appl. Phys. Lett. 86, 152904 (2005).Google Scholar
120Dalapati, G.K., Tong, Y., Loh, W.Y., Mun, H.K., Cho, B.J., IEEE Trans. Electron Devices 54, 1831 (2007).Google Scholar
121Shahrjerdi, D., Tutuc, E., Banerjee, S.K., Appl. Phys. Lett. 91, 063501 (2007).Google Scholar
122Kim, C.Y., Cho, S.W., Cho, M.-H., Chung, K.B., An, C.-H., Kim, H., Lee, H.J., Ko, D.-H., Appl. Phys. Lett. 93, 192902 (2008).Google Scholar
123Hackley, J.C., Demaree, J.D., Gougousi, T., Appl. Phys. Lett. 92, 162902 (2008).Google Scholar
124Sawada, T., Hasegawa, H., Thin Solid Films 56, 183 (1979).Google Scholar
125Hasegawa, H., Sawada, T., IEEE Trans. Electron Devices 27, 1055 (1980).Google Scholar
126Koveshnikov, S., Tsai, W., Ok, I., Lee, J.C., Torkanov, V., Yakimov, M., Oktyabrsky, S., Appl. Phys. Lett. 88, 022106 (2006).Google Scholar
127Shahrjerdi, D., Garcia-Gutierrez, D.I., Akyol, T., Bank, S.R., Tutuc, E., Lee, J.C., Banerjee, S.K., Appl. Phys. Lett. 91, 193503 (2007).Google Scholar
128de Souza, J.P., Kiewra, E., Sun, Y., Callegari, A., Sadana, D.K., Shahidi, G., Webb, D.J., Fompeyrine, J., Germann, R., Rossel, C., Marchiori, C., Appl. Phys. Lett. 92, 153508 (2008).Google Scholar
129Pashley, M.D., Haberern, K.W., Feenstra, R.M., Kirchner, P.D., Phys. Rev. B 48, 4612 (1993).Google Scholar
130Yan, D., Look, E., Yin, X., Pollak, F.H., Woodall, J.M., Appl. Phys. Lett. 65, 186 (1994).Google Scholar
131Yang, T., Xuan, Y., Zemlyanov, D., Shen, T., Wu, Y.W., Woodall, J.M., Ye, P.D., Aguirre-Tostado, F.S., Milojevic, M., McDonnell, S., Wallace, R.M., Appl. Phys. Lett. 91, 142122 (2007).Google Scholar
132Hinkle, C.L., Sonnet, A.M., Milojevic, M., Aguirre-Tostado, F.S., Kim, H.C., Kim, J., Wallace, R.M., Vogel, E.M., Appl. Phys. Lett. 93, 113506 (2008).Google Scholar
133Passlack, M., in Materials Fundamentals of Gate Dielectrics, Demkov, A.A., Navrotsky, A., Eds. (Springer, Dordrecht, 2005), p. 403.Google Scholar
134Martens, K., Wang, W., De Keersmaecker, K., Borghs, G., Groeseneken, G., Maes, H., Microelectron. Eng. 84, 2146 (2007).Google Scholar
135Brammertz, G., Martens, K., Sioncke, S., Delabie, A., Caymax, M., Meuris, M., Heyns, M., Appl. Phys. Lett. 91, 133510 (2007).Google Scholar
136Brammertz, G., Lin, H.-C., Martens, K., Mercier, D., Sioncke, S., Delabie, A., Wang, W.E., Caymax, M., Meuris, M., Heyns, M., Appl. Phys. Lett. 94, 183504 (2008).Google Scholar
137Passlack, M., Droopad, R., Yu, Z., Medendorp, N., Braddock, D., Wang, X.W., Ma, T.P., Büyüklimanli, T., IEEE Electron Device Lett. 29, 1181 (2008).Google Scholar
138Lu, H.-L., Sun, L., Ding, S.-J., Xu, M., Wei Zhang, D., Wang, L.-K., Appl. Phys. Lett. 89, 152910 (2006).Google Scholar
139Hale, M.J., Sexton, J.Z., Winn, D.L., Kummel, A.C., Erbudak, M., Passlack, M., J. Chem. Phys. 120, 5745 (2004).Google Scholar
140Sonnet, A.M., Hinkle, C.L., Jivani, M.N., Chapman, R.A., Pollack, G.P., Wallace, R.M., Vogel, E.M., Appl. Phys. Lett. 93, 122109 (2008).Google Scholar
141Cheng, C.-W., Fitzgerald, E.A., Appl. Phys. Lett. 93, 194103 (2008).Google Scholar
142Aguirre-Tostado, F.S., Milojevic, M., Choi, K.J., Kim, H.C., Hinkle, C.L., Vogel, E.M., Kim, J., Yang, T., Xuan, Y., Ye, P.D., Wallace, R.M., Appl. Phys. Lett. 93, 061907 (2008).Google Scholar
143Hinkle, C.L., Milojevic, M., Vogel, E.M., Wallace, R.M., Microelectron. Eng. 86, 1544 (2009),Google Scholar
Hinkle, C.L., Milojevic, M., Brennan, B., Sonnet, A.M., Aguirre-Tostado, F.S., Hughes, G.J., Vogel, E.M., Wallace, R.M., Appl. Phys. Lett. 94, 162101 (2009).Google Scholar
144Hale, M.J., Yi, S.I., Sexton, J.Z., Kummel, A.C., J. Chem. Phys. 119, 6719 (2003).Google Scholar
145Kruse, P., McLean, J.G., Kummel, A.C., J. Chem. Phys. 113, 9217 (2000).Google Scholar
146Droopad, R., Rajagopalan, K., Abrokwah, J., Passlack, M., J. Vac. Sci. Technol. B 24, 1479 (2006).Google Scholar
147Droopad, R., Rajagopalan, K., Abrokwah, J., Zurcher, P., Passlack, M., Microelectron. Eng. 84, 2138 (2007).Google Scholar
148Brammertz, G., Heyns, M., Meuris, M., Caymax, M., Jiang, D., Microelectron. Eng. 84, 2154 (2007).Google Scholar
149Huang, M.L., Chang, Y.C., Chang, C.H., Lin, T.D., Kwo, J., Wu, T.B., Hong, M., Appl. Phys. Lett. 89, 012903 (2006).Google Scholar
150Ye, P.D., Wilk, G.D., Yang, B., Kwo, J., Gossmann, H.-J.L., Hong, M., Ng, K.K., Bude, J., Appl. Phys. Lett. 84, 434 (2004).Google Scholar
151Xuan, Y., Ye, P.D., Lin, H.C., Wilk, G.D., Appl. Phys. Lett. 89, 132103 (2006); Appl. Phys. Lett. 88, 263518 (2006).Google Scholar
152Shin, B., Choi, D., Harris, J.S., McIntyre, P.C., Appl. Phys. Lett. 93, 052911 (2008).Google Scholar
153Xuan, Y., Wu, Y.Q., Lin, H.C., Shen, T., Ye, P.D., IEEE Electron Device Lett. 28, 935 (2007).Google Scholar
154Lin, T.D., Chiu, H.C., Chang, P., Tung, L.T., Chen, C.P., Hong, M., Kwo, J., Tsai, W., Wang, Y.C., Appl. Phys. Lett. 93, 033516 (2008).Google Scholar
155Xuan, Y., Ye, P.D., Shen, T., Appl. Phys. Lett. 91, 232107 (2007).Google Scholar
156Li, N., Harmon, E.S., Hyland, J., Salzman, D.B., Ma, T.P., Xuan, Y., Ye, P.D., Appl. Phys. Lett. 92, 143507 (2008).Google Scholar
157Goel, N., Majhi, P., Chui, C.O., Tsai, W., Choi, D., Harris, J.S., Appl. Phys. Lett. 89, 163517 (2006).Google Scholar
158Shahrjerdi, D., Rotter, T., Balakrishnan, G., Huffaker, D., Tutuc, E., Banerjee, S.K., IEEE Electron Device Lett. 29, 575 (2008).Google Scholar
159Chang, Y.C., Huang, M.L., Lee, K.Y., Lee, Y.J., Lin, T.D., Hong, M., Kwo, J., Lay, T.S., Liao, C.C., Cheng, K.Y., Appl. Phys. Lett. 92, 072901 (2008).Google Scholar
160Lee, K.Y., Lee, Y.J., Chang, P., Huang, M.L., Chang, Y.C., Hong, M., Kwo, J., Appl. Phys. Lett. 92, 252908 (2008).Google Scholar
161Koveshnikov, S., Goel, N., Majhi, P., Wen, H., Santos, M.B., Oktyabrsky, S., Tokranov, V., Kambhampati, R., Moore, R., Zhu, F., Lee, J., Tsai, W., Appl. Phys. Lett. 92, 222904 (2008).Google Scholar
162Goel, N., Heh, D., Koveshnikov, S., Ok, I., Oktyabrsky, S., Tokranov, V., Kambhampati, R., Yakimov, M., Sun, Y., Pianetta, P., Gaspe, C.K., Santos, M.B., Lee, J., Majhi, P., Tsai, W., IEEE Int. Electron Devices Meeting Tech. Dig. 363 (2008).Google Scholar
163Xuan, Y., Wu, Y.Q., Shen, T., Yang, T., Ye, P.D., IEEE Int. Electron Devices Meeting Tech. Dig. 637 (2007).Google Scholar
164Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L., Appl. Phys. Lett. 93, 062107 (2008).Google Scholar
165Aguirre-Tostado, F.S., Milojevic, M., Lee, B., Kim, J., Wallace, R.M., Appl. Phys. Lett. 93, 172907 (2008).Google Scholar
166Li, H., Shenai, D.V., Pugh, R., Kim, J., Mater. Res. Soc. Symp. Proc. 1036, (2008).Google Scholar
167Choia, D.Harris, J.S., Warusawithana, M., Schlom, D.G., Appl. Phys. Lett. 90, 243505 (2007).Google Scholar
168Koveshnikov, S., Adamo, C., Tokranov, V., Yakimov, M., Kambhampati, R., Warusawithana, M., Schlom, D.G., Tsai, W., Oktyabrsky, S., Appl. Phys. Lett. 93, 012903 (2008).Google Scholar
169Wallace, R.M., Wilk, G.D., MRS Bull. 27 (3), 192 (2002).Google Scholar
170Chang, C.H., Chiou, Y.K., Chang, Y.C., Lee, K.Y., Lin, T.D., Wu, T.B., Hong, M., Kwo, J., Appl. Phys. Lett. 89, 242911 (2006).Google Scholar
171Milojevic, M., Aguirre-Tostado, F.S., Hinkle, C.L., Kim, H.C., Vogel, E.M., Kim, J., Wallace, R.M., Appl. Phys. Lett. 93, 202902 (2008).Google Scholar
172Hou, C.H., Chen, M.C., Chang, C.H., Wu, T.B., Chiang, C.D., Luob, J.J., J. Electrochem. Soc. 155, G180 (2008).Google Scholar
173Kobayashi, M., Chen, P.T., Sun, Y., Goel, N., Majhi, P., Garner, M., Tsai, W., Pianetta, P., Nishi, Y., Appl. Phys. Lett. 93, 182103 (2008).Google Scholar
174Oktyabrsky, S., Tokranov, V., Yakimov, M., Moorea, R., Koveshnikov, S., Tsai, W., Zhuc, F., Lee, J.C., Mater. Sci. Eng. B 135, 272 (2006).Google Scholar
175Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Asenov, A., Zurcher, P., Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M., Thayne, I.G., IEEE Electron Device Lett. 28 (12), 1080 (2007).Google Scholar
176Kim, D.H., del Alamo, J.A., IEEE Electron Device Lett. 29 (8), 830 (2008).Google Scholar