Skip to main content Accessibility help
×
Home
Hostname: page-component-7ccbd9845f-2c279 Total loading time: 0.817 Render date: 2023-01-31T09:19:33.576Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Article contents

Metamorphic materials for quantum computing

Published online by Cambridge University Press:  14 March 2016

Peter W. Deelman
Affiliation:
HRL Laboratories, LLC, USA; pwdeelman@hrl.com
Lisa F. Edge
Affiliation:
HRL Laboratories, LLC, USA; lfedge@hrl.com
Clayton A. Jackson
Affiliation:
HRL Laboratories, LLC, USA; cajackson@hrl.com
Get access

Abstract

Quantum information and computing are at the forefront of computer science, but their implementation relies on significant developments in materials science. In particular, suitable, lattice-matched substrates for two promising approaches—electrostatically defined quantum dots in Si/SiGe heterostructures, and superconducting circuits containing Josephson junctions—do not exist. Instead, these approaches rely on metamorphic substrates. In this article, we focus on the general structure and requirements of SiGe quantum dot heterostructures, the demands they impose on the underlying substrate, and the impact that properties of the metamorphic substrate have on device performance. Superconductor Josephson junction materials are briefly discussed in a similar fashion, and opportunities for future developments in both systems are described.

Type
Research Article
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Nielsen, M.A., Chuang, I.L., Quantum Computation and Quantum Information (Cambridge University Press, Cambridge, 2000).Google Scholar
Ladd, T.D., Jelezko, F., Laflamme, R., Nakamura, Y., Monroe, C., O’Brien, J.L., Nature 464, 45 (2010).CrossRef
Morello, A., Pla, J.J., Zwanenburg, F.A., Chan, K.W., Tan, K.Y., Huebl, H., Möttönen, M., Nugroho, C.D., Yang, C., van Donkelaar, J.A., Alves, A.D.C., Jamieson, D.N., Escott, C.C., Hollenberg, L.C.L., Clark, R.G., Dzurak, A.S., Nature 467, 687 (2010).CrossRef
Petta, J.R., Johnson, A.C., Taylor, J.M., Laird, E.A., Yacoby, A., Lukin, M.D., Marcus, C.M., Hanson, M.P., Gossard, A.C., Science 309, 2180 (2005).CrossRef
Croke, E.T., Borselli, M.G., Gyure, M.F., Bui, S.S., Milosavljevic, I.I., Ross, R.S., Schmitz, A.E., Hunter, A.T., Appl. Phys. Lett. 96, 042101 (2010).CrossRef
Nordberg, E.P., Ten Eyck, G.A., Stalford, H.L., Muller, R.P., Young, R.W., Eng, K., Tracy, L.A., Childs, K.D., Wendt, J.R., Grubbs, R.K., Stevens, J., Lilly, M.P., Eriksson, M.A., Carroll, M.S., Phys. Rev. B Condens. Matter 80, 115331 (2009).CrossRef
Maune, B.M., Borselli, M.G., Huang, B., Ladd, T.D., Deelman, P.W., Holabird, K.S., Kiselev, A.A., Alvarado-Rodriguez, I., Ross, R.S., Schmitz, A.E., Sokolich, M., Watson, C.A., Gyure, M.F., Hunter, A.T., Nature 481, 344 (2012).CrossRef
Zwanenburg, F.A., Dzurak, A.S., Morello, A., Simmons, M.Y., Hollenberg, L.C.L., Klimeck, G., Rogge, S., Coppersmith, S.N., Eriksson, M.A., Rev. Mod. Phys. 85, 961 (2013).CrossRef
Megrant, A., Neill, C., Barends, R., Chiaro, B., Chen, Y., Feigl, L., Kelly, J., Lucero, E., Mariantoni, M., O’Malley, P.J.J., Sank, D., Vainsencher, A., Wenner, J., White, T.C., Yin, Y., Zhao, J., Palmstrøm, C.J., Martinis, J.M., Cleland, A.N., Appl. Phys. Lett. 100, 113510 (2012).CrossRef
Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., Herzog, H.J., Phys. Rev. Lett. 54, 2441 (1985).CrossRef
Schäffler, F., Semicond. Sci. Technol. 12, 1515 (1997).CrossRef
Currie, M.T., Leitz, C.W., Langdo, T.A., Taraschi, G., Fitzgerald, E.A., Antoniadis, D.A., J. Vac. Sci. Technol. B 19, 2268 (2001).CrossRef
Paul, D.J., Semicond. Sci. Technol. 19, R75 (2004).CrossRef
Usami, N., “Types of Silicon–Germanium (SiGe) Bulk Crystal Growth Methods and Their Applications,” in Silicon-Germanium (SiGe) Nanostructures, 1st ed., Shiraki, Y., Usami, N., Eds. (Woodhead Publishing, Oxford, UK, 2011), pp. 7282.CrossRefGoogle Scholar
Yildiz, M., Dost, S., Lent, B., J. Cryst. Growth 280, 151 (2005).CrossRef
Wollweber, J., Schulz, D., Schröder, W., J. Cryst. Growth 158, 166 (1996).CrossRef
Abrosimov, N.V., Rossolenko, S.N., Thieme, W., Gerhardt, A., Schröder, W., J. Cryst. Growth 174, 182 (1997).CrossRef
Dold, P., Barz, A., Recha, S., Pressel, K., Franz, M., Benz, K.W., J. Cryst. Growth 192, 125 (1998).CrossRef
Yonenaga, I., J. Cryst. Growth. 275, 91 (2005).CrossRef
Yonenaga, I., Sakurai, M., Sluiter, M.H.F., Kawazoe, Y., Muto, S., J. Mater. Sci. Mater. Electron. 16, 429 (2005).CrossRef
Kinoshita, K., Arai, Y., Nakatsuka, O., Taguchi, K., Tomioka, H., Tanaka, R., Yoda, S., Jpn. J. Appl. Phys. 54, 04DH03 (2015).CrossRef
Lee, M.L., Fitzgerald, E.A., Bulsara, M.T., Currie, M.T., Lochtefeld, A., J. Appl. Phys. 97, 011101 (2005).CrossRef
Matthews, J.W., Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974).
Monroe, D., Xie, Y.H., Fitzgerald, E.A., Silverman, P.J., Watson, G.P., J. Vac. Sci. Technol. B 11, 1731 (1993).CrossRef
Currie, M.T., Samavedam, S.B., Langdo, T.A., Leitz, C.W., Fitzgerald, E.A., Appl. Phys. Lett. 72, 1718 (1998).CrossRef
Boykin, T.B., Klimeck, G., Eriksson, M.A., Friesen, M., Coppersmith, S.N., von Allmen, P., Oyafuso, F., Lee, S., Appl. Phys. Lett. 84, 115 (2004).CrossRef
Friesen, M., Chutia, S., Tahan, C., Coppersmith, S.N., Phys. Rev. B Condens. Matter 75, 115318 (2007).CrossRef
Ando, T., Fowler, A.B., Stern, F., Rev. Mod. Phys. 54, 437 (1982).CrossRef
Leitz, C., Yang, V., Carroll, M., Langdo, T., Westhoff, R., Vineis, C., Bulsara, M., Mater. Sci. Semicond. Process. 8, 187 (2005).CrossRef
Mooney, P.M., Jordan-Sweet, J.L., Noyan, I.C., Kaldor, S.K., Wang, P.C., Physica B Condens. Matter 273, 608 (1999).CrossRef
Mooney, P.M., Legoues, F.K., Chu, J.O., Nelson, S.F., Appl. Phys. Lett. 62, 3464 (1993).CrossRef
Wallis, D.J., Robbins, D.J., Pidduck, A.J., Williams, G.M., Churchill, A., Newey, J., “Mosaic Crystal Tilts and Their Relationship to Dislocation Structure, Surface Roughness and Growth Conditions in Relaxed SiGe Layers,”Mater. Res. Soc. Symp. Proc. 533, Fitzgerald, E.A., Mooney, P.M., Houghton, D.C., Eds. (Materials Research Society, Warrendale, PA, 1998), p. 77.Google Scholar
Mooney, P.M., J. Mater. Sci. Mater. Electron. 10, 209 (1999).CrossRef
Evans, P.G., Savage, D.E., Prance, J.R., Simmons, C.B., Lagally, M.G., Coppersmith, S.N., Eriksson, M.A., Schülli, T.U., Adv. Mater. 24, 5217 (2012).CrossRef
Friesen, M., Coppersmith, S.N., Phys. Rev. B Condens. Matter 81, 115324 (2010).CrossRef
Boykin, T.B., Klimeck, G., Friesen, M., Coppersmith, S.N., von Allmen, P., Oyafiuso, F., Lee, S., Phys. Rev. B Condens. Matter 70, 1 (2004).CrossRef
Ismail, K., LeGoues, F.K., Saenger, K.L., Arafa, M., Chu, J.O., Mooney, P.M., Meyerson, B.S., Phys. Rev. Lett. 73, 3447 (1994).CrossRef
Goswami, S., Slinker, K.A., Friesen, M., McGuire, L.M., Truitt, J.L., Tahan, C., Klein, L.J., Chu, J.O., Mooney, P.M., van der Weide, D.W., Joynt, R., Coppersmith, S.N., Eriksson, M.A., Nat. Phys. 3, 41 (2007).CrossRef
Borselli, M.G., Ross, R.S., Kiselev, A.A., Croke, E.T., Holabird, K.S., Deelman, P.W., Warren, L.D., Alvarado-Rodriguez, I., Milosavljevic, I., Ku, F.C., Wong, W.S., Schmitz, A.E., Sokolich, M., Gyure, M.F., Hunter, A.T., Appl. Phys. Lett. 98, 123118 (2011).CrossRef
You, J.Q., Nori, F., Nature 474, 589 (2011).CrossRef
Creedon, D.L., Reshitkyk, Y., Farr, W., Martinis, J.M., Duty, T.L., Tobar, M.E., Appl. Phys. Lett. 98, 222903 (2011).CrossRef
Oh, S., Cicak, K., Kline, J.S., Sillanpää, M.A., Osborn, K.D., Whittaker, J.D., Simmonds, R.W., Pappas, D.P., Phys. Rev. B Condens. Matter 74, 100502 (2006).CrossRef
Krogstrup, P., Ziino, N.L.B., Chang, W., Albrecht, S.M., Madsen, M.H., Johnson, E., Nygård, J., Marcus, C.M., Jespersen, T.S., Nat. Mater. 14, 400 (2015).CrossRef
Pilania, G., Thijsse, B.J., Hoagland, R.G., Lazić, I., Valone, S.M., Liu, X.Y., Sci. Rep. 4, 4485 (2014).CrossRef

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Metamorphic materials for quantum computing
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Metamorphic materials for quantum computing
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Metamorphic materials for quantum computing
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *