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Emerging Materials Challenges in Microelectronics Packaging

Published online by Cambridge University Press:  31 January 2011

D. R. Frear  and
S. Thomas
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Introduction

The trend for microelectronic devices has historically been, and will continue to be, toward a smaller feature size, faster speeds, more complexity, higher power, and lower cost. The driving force behind these advances has traditionally been microprocessors. With the tremendous growth of wireless telecommunications, rf applications are beginning to drive many areas of microelectronics that traditionally were led by developments in microprocessors. An increasingly dominant factor in rf microelectronics is electronic packaging, and the materials needed to create the package, because the package materials strongly affect the performance of the electronics. Many challenges remain for the packaging of microprocessors as well. These challenges include increased speed, the number of input/output interconnects, decreased pitch, and decreased cost. This article highlights the key issues facing the packaging of high-performance digital and rf electronics.

Keywords

electronic materialsflip chipsmetalsmicroelectronics packaging and integrationwire bonding

Information

Type
Research Article
Information
MRS Bulletin , Volume 28 , Issue 1: Microelectronics Packaging and Integration , January 2003 , pp. 68 - 74
Copyright
Copyright © Materials Research Society 2003

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References

1.Philofsky, E., Solid-State Electron. 13 (1970) p. 1391.CrossRefGoogle Scholar
2.Levine, L. and Sheaffer, M., Solid State Technol. 36 (March 1993) p. 63.Google Scholar
3.Goldman, L.S., IBM J. Res. Dev. 13 (1969) p. 251.CrossRefGoogle Scholar
4.Blackwell, K.J., Memis, I.I., and Kuracina, R.P., High Density Interconnect—HDI 1 (4) (1998) p. 20.Google Scholar
5.Andricacos, P.C., Uzoh, C., Dukovic, J.O., Horkans, J., and Deligianni, H., IBM J. Res. Dev. 42 (1998) p. 567.CrossRefGoogle Scholar
6.Hu, C.-K. and Harper, J.M.E., Mater. Chem. Phys. 52 (1998) p. 5.CrossRefGoogle Scholar
7.Lee, N.C., Adv. Microelectron. (September/ October 1999) p. 29.Google Scholar
8.Grusd, A., in Circuits Assembly 10 (8) (1999) p. 32.Google Scholar
9.Glazer, J., Int. Mater. Rev. 40 (2) (1995) p. 65.CrossRefGoogle Scholar
10.Glazer, J., J. Electron. Mater. 23 (8) (1994) p. 693.CrossRefGoogle Scholar
11.Whitten, G., in Proc. 50th Electronic Components and Technology Conf. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 1410.Google Scholar
12.Bradley, E. III and Hramisavljevic, J., in Proc. 50th Electronic Components and Technology Conf. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 1443.Google Scholar
13.Choi, W.K. and Lee, H.M., J. Electron. Mater. 29 (10) (2000) p. 1207.CrossRefGoogle Scholar
14.Guo, F., Choi, S., Lucas, J.P., and Subramanian, K.N., J. Electron. Mater. 29 (10) (2000) p. 1241.CrossRefGoogle Scholar
15.Choi, T.S., Subramanian, K.N., and Lucas, J.P., J. Electron. Mater. 29 (10) (2000) p. 1249.CrossRefGoogle Scholar
16.Miyazawa, Y. and Ariga, T., in Proc. 1st Int. Symp. on Environmentally Conscious Design (IEEE Computer Society, Los Alamitos, CA, 1999) p. 616.Google Scholar
17.Abtew, M. and Selvardery, G., Mater. Sci. Eng. 27 (2000) p. 95.CrossRefGoogle Scholar
18.Seelig, H.K. and Suraski, D., in Proc. 50th Electronic Components and Technology Conf. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 1405.Google Scholar
19.Snowden, K.G., Tanner, C.G., and Thompson, J.R., in Proc. 50th Electronic Components and Technology Conf. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 1416.Google Scholar
20.Korhonen, T.M., Su, P., Hong, S.J., and Korhonen, M.A., J. Electron. Mater. 29 (10) (2000) p. 1194.CrossRefGoogle Scholar
21.Foley, J.C., Gickler, A., Leprevost, F.H., and Brown, D., J. Electron. Mater. 29 (10) (2000) p. 1258.CrossRefGoogle Scholar
22.Frear, D.R. and Vianco, P.T., Metall. Trans. 25A (1994) p. 1509.CrossRefGoogle Scholar
23.Roberson, M.W., Deane, P.A., Bonafede, S., Huffman, A., and Nangalia, S., J. Electron. Mater. 29 (10) (2000) p. 1274.CrossRefGoogle Scholar
24.Hasnain, Z. and Ditali, A., in 30th Annu. Proc. on Reliability Physics (IRPS Publication Services, Westmoreland, NY, 1992) p. 276.Google Scholar
25.Lin, J.K., Lytle, B., Drye, J., Scharr, T., Sharma, R., and Subrahmanyan, R., in Proc. 46th Electronic Components and Technology Conf. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1996) p. 1059.Google Scholar
26.Bowles, P. and Li, L., in Proc. IMAPS Adv. Technol. Workshop on Passive Integration (International Microelectronics and Packaging Society, Washington, DC, 2002) p. 71.Google Scholar