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High-resolution direct-write patterning using focused ion beams

Published online by Cambridge University Press:  09 April 2014

Leonidas E. Ocola ,
Chad Rue  and
Diederik Maas
Leonidas E. Ocola
Affiliation:
Center for Nanoscale Materials, Argonne National Laboratory; ocola@anl.gov
Chad Rue
Affiliation:
FEI Company; chad.rue@fei.com
Diederik Maas
Affiliation:
TNO, Delft; diederik.maas@tno.nl
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Abstract

Over the last few years, significant improvements in sources, columns, detectors, control software, and accessories have enabled a wealth of new focused ion beam applications. In addition, modeling has provided many insights into ion-sample interactions and the resultant effects on the sample. With the knowledge gained, the community has found new ion-beam induced chemistries and ion-beam sources, allowing extending nanostructure fabrication and material deposition to smaller dimensions and better control for direct write and patterning. Insignificant proximity effects in resist-based ion beam lithography, combined with the availability of sub-nm ion spot sizes, opens the way to sub-10 nm structures and dense patterns. Additionally, direct-write ion beam nanomachining can process multilevel structures with arbitrary depths in one single process step, with all the information included in a single standard design file, thus enabling fabrication applications not achievable with any other technique.

Keywords

HeNeSiGamicrostructurenanostructureion-solid interactionsion-beam assisted depositionion-implantationlithography (removal)ion-beam processing

Information

Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 4: Focused Ion Beam Technology and Applications , April 2014 , pp. 336 - 341
Copyright
Copyright © Materials Research Society 2014 

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