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In situ high-resolution transmission electron microscopy of material reactions

Published online by Cambridge University Press:  17 December 2013

Robert Sinclair
Robert Sinclair*
Affiliation:
Stanford University; bobsinc@stanford.edu
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Abstract

A review is presented of the development of in situ high-resolution transmission electron microscopy (HRTEM) and its application to directly study the atomic behavior in thermally activated material reactions. Not only are the atomic re-arrangements continuously recorded, but kinetic measurements can be made at controlled elevated temperatures. Examples include work on the atomic motion on CdTe surface ledges, solid phase epitaxial regrowth of silicon, crystallization of amorphous silicon and of amorphous tantalum oxide thin films, solid-state amorphization at metal-silicon interfaces, metal-induced crystallization of amorphous silicon, germanium and carbon, phase separation and crystallization in hafnium silicate thin films, and “spiking” across thin gate oxides separating nickel silicide from a monocrystalline silicon substrate. The future prospects of in situ HRTEM are discussed, and the increasing breadth of application of this approach is recognized, especially in light of the advances in HRTEM capabilities.

Keywords

Amorphousannealingchemical reactionthin filmtransmission electron microscopy
Type
Technical Feature
Information
MRS Bulletin , Volume 38 , Issue 12: Functional Oxide Interfaces , December 2013 , pp. 1065 - 1071
Copyright
Copyright © Materials Research Society 2013 

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