Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-30T00:07:52.265Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Deposition, Film Modification and Synthesis

Published online by Cambridge University Press:  29 November 2013

S.M. Rossnagel  and
J.J. Cuomo
Get access

Extract

Ion beam processing for thin film deposition is rapidly overtaking some of the more conventional plasma-based thin film processing techniques. This is due to strong improvements in the types and reliabilities of the sources available as well as a growing understanding of the advantages and capabilities of using ion beams.

An ion beam process can be differentiated from a plasma-based process in that the plasma in an ion beam is generated away from the sample and a beam of ions is directed at the sample. In a plasma-based process, the sample is usually immersed in the plasma. This highlights the fundamental advantage of ion beam processing—control of the flux and energy of the ions incident on either a sample or a target (for sputter deposition). It is this control which is missing in plasma-based processing, where the ion flux (current), ion energy, chamber pressure, and gas species are all hopelessly intertwined. In addition, certain aspects of the ion bombardment—angle of incidence, complications of gas scattering, etc. —are essentially fixed in plasma-based processing, leaving no room to vary parameters, and in conjunction, film properties.

A wealth of different types of ion sources cover a broad range of beam currents and energies. At the high energy end (0.1 – 20 MeV) are the implantation sources, typically used for doping semiconductors and treating surfaces (hardening, for example) and for various types of nuclear chemical analysis. These sources, however, tend to be very low current (μA). At slightly lower energies (tens of kilo-electron volts), but significantly higher currents (50 A), are the ion sources used for heating fusion plasmas.

Type
Deposition Processes
Information
MRS Bulletin , Volume 13 , Issue 12 , December 1988 , pp. 40 - 45
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Takagi, T., in Ionized Cluster Beam Deposition and Epitaxy, (Noyes Publications, Park Ridge, NJ, 1988).Google Scholar
2.Cuomo, J. and Rossnagel, S.M., J. Vac. Sci. Technol. A4 (1986) p. 393.CrossRefGoogle Scholar
3.Roy, R.A., Yee, D., Cuomo, J.J., J. Vac. Sci. Technol. A6 (1988) p. 1621.CrossRefGoogle Scholar
4.Krikorian, E. and Sneed, R.J., Astrophys. Space Sci. 65 (1979) p. 129.CrossRefGoogle Scholar
5.Ziemann, P. and Kay, E., J. Vac. Sci. Technol. Al (1983) p. 512.CrossRefGoogle Scholar
6.Hultman, L., Dissertation 186, Linkoping University, Sweden, 1988, p. 163–177.Google Scholar
7.Kay, E., Parmigiani, F. and Parrish, W., J. Vac. Sci. Technol. A5 (1987) p. 44.CrossRefGoogle Scholar
8.Huang, T.C., Lim, G., Parmigiani, F. and Kay, E., J. Vac. Sci. Technol. A3 (1985) p. 2161.CrossRefGoogle Scholar
9. Lock See Yu, , Harper, J.M.E., Cuomo, J.J. and Smith, D.A., Appl. Phys. Lett. 47 (1985) p. 932.CrossRefGoogle Scholar
10. Lock See Yu, , Harper, J.M.E., Cuomo, J.J. and Smith, D.A., J. Vac. Sci. Technol. A4 (1986) p. 443.CrossRefGoogle Scholar
11.Bradley, R.M., Harper, J.M.E., and Smith, D.A., J. Appl. Phys. 60 (1986) p. 4160.CrossRefGoogle Scholar
12.Bradley, R.M., in Ion Beam Deposition, Film Modification and Synthesis, edited by Cuomo, J.J., Rossnagel, S.M., and Kaufman, H.R., (Noyes Publications, Park Ridge, NJ, 1988-in press).Google Scholar
13.Martin, P.J., Macleod, H.A., Netterheld, R.P., and CSainty, G., Appl. Opt. 22 (1983) p. 178.CrossRefGoogle Scholar
14.Parmigiani, F., Kay, E., Huang, T.C., and Swalen, J.D., Appl. Opt. 24 (1985) p. 3335.CrossRefGoogle Scholar
15.Hoffman, D.W. and Thornton, J.A., Thin Solid Films, 40 (1977) p. 355.CrossRefGoogle Scholar
16.Thornton, J.A. and Hoffman, D.W., J. Vac. Sci. Technol. 18 (1981) p. 203.CrossRefGoogle Scholar
17.Thornton, J.A. and Hoffman, D.W., J. Vac. Sci. Technol. A3 (1985) p. 576.CrossRefGoogle Scholar
18.Hisrch, E.H. and Varga, I.K., Thin Solid Films 69 (1980) p. 99.Google Scholar
19.Kay, E., in Erosion and Growth of Solids Stimulated by Atom and Ion Beams, edited by Kiriakidis, G., Carter, G., and Whitton, J.L., (NATO-AS1 series, 112 (1986).Google Scholar
20.Sun, S.S., J. Vac. Sci. Technol. A4 (1986) p. 572.CrossRefGoogle Scholar
21.Müller, K-H., J. Appl. Phys. 58 (1986) p. 2803.CrossRefGoogle Scholar
22.Müller, K-H., Phys. Rev. B 35 (1987) p. 7906.CrossRefGoogle Scholar
23.Müller, K-H., in Ion Beam Deposition, Film Modification and Synthesis, edited by Cuomo, J.J., Rossnagel, S.M., and Kaufman, H.R. (Noyes Publications, Park Ridge, NJ, 1988-in press).Google Scholar
24.Winters, H.F. and Sigmund, P., J. Appl. Phys. 45 (1974) p. 4760.CrossRefGoogle Scholar
25.Cuomo, J.J. and Gambino, R.J., J. Vac. Sci. Technol. 14 (1977) p. 152.CrossRefGoogle Scholar
26.Guarnieri, C.R., Offsey, S.D., and Cuomo, J.J., J. Vac. Sci. Technol. (tobe published).Google Scholar
27.Kapoor, V.J., Mirtich, M.J. and Banks, B.A., J. Vac. Sci. Technol. A4 (1986) p. 1013.CrossRefGoogle Scholar
28.Kimock, F.M., Air Products, Allentown, PA, “Diamond-Ageis” project, 1988.Google Scholar