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Mechanical Stress in VLSI Interconnections: Origins, Effects, Measurement, and Modeling

  • Paul A. Flinn
Extract

Problems with mechanical stress in very large-scale integration (VLSI) interconnections appeared quite early in the history of the industry. Failures were observed in the dielectric itself, in the die, and in metal lines. Various process and design changes were made to fix the problems, but the continuing shrinking of dimensions and increased complexity of interconnection structures have resulted in recurrence of old problems, the appearance of new ones, and increasing difficulty in developing fixes. The choices for interconnection materials and processes have become increasingly constrained. The shift from hermetic to plastic packaging reduces the choices for passivation materials. The reduced dimensions for the active devices and the corresponding shortening of diffusion distances limit the “thermal budget”; interconnection processing must be carried out quickly and at relatively low temperatures. The reduced space available for interconnections has resulted in the use of high aspect ratios, multiple layers of metal, and the need for planarization. These all lead to further constraints on materials and processes. An additional complicating factor is the continuing effort to reduce the time from initial design to marketing the product. Since many mechanical-stress-induced problems are wear-out reliability problems, they may require extensive testing for detection. If a problem is not found until late in the product cycle, the economic consequences may be severe. To avoid costly late detection of problems and frantic scrambles for fixes, it is essential to have a clear understanding of the various origins of mechanical stress, the behavior of various materials and interfaces under stress, and the potential failure mechanisms.

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1.Flinn, P.A., in Stress-Induced Phenomena in Metallization (AIP Conf. Proc. 263, Am. Inst. of Phys., New York, 1992) p. 73.
2.Shirley, G.G. and Blish, R.C. II, in Proc. of the 25th Ann. Int. Reliability Symp. (IEEE, New York, 1987) p. 238.
3.Evans, H.C., Mater. Sci. Eng. A120 (1989) p. 139.
4.Chouaf, A., Loppin, G., Ignat, M., and Terriez, J.M., in Materials Reliability in Microelectronics III, edited by Rodbell, K., Filter, B., Frost, H., and Ho, P. (Mater. Res. Soc. Symp. Proc. 309, Pittsburgh, 1993) p. 211.
5.Blech, I.A. and Meieran, E.S., in Appl. Phys. Lett. 11 (1967) p. 263.
6.Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A., in Proc. 22nd Ann. Int. Reliability Symp. (IEEE, 1984) p. 6.
7.Klema, J., Pyle, R., and Domangue, E., in Proc. of the 22nd Ann. Int. Reliability Symp. (IEEE, 1984) p. 1.
8.Sinha, A.K. and Sheng, T.T., Thin Solid Films 48 (1978) p. 117.
9.McInerney, E.J. and Flinn, P.A., in Proc. 20th Ann. Int. Reliability Symp. (IEEE, 1982) p. 264.
10.Flinn, P.A., Gardner, D.S., and Nix, W.D., in IEEE Transactions on Electron Devices ED-34 (1987) p. 689.
11.Flinn, P.A., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J.C., Nix, W.D., Barnett, D.M., and Smith, D.A. (Mater. Res. Soc. Symp. Proc. 130, Pittsburgh, 1989) p. 41.
12.Flinn, P.A., J. Mater. Res. 6 (1991) p. 1498.
13.Ho, P.S., Yeo, I., Anderson, S.G.H., and Hu, C.K., in AIP Conference Proceedings 305 (Am. Inst. of Phys., 1994) p. 62.
14.Burges, U., Helneder, H., Shneegans, M., Beckers, D., Hallerback, M., Schroeder, H., and Schilling, W., in Thin Films: Stresses and Mechanical Properties V, edited by Baker, S.P., Børgesen, P., Townsend, P.H., Ross, C.A., and Volkert, C.A. (Mater. Res. Soc. Symp. Proc. 356, Pittsburgh, 1995) p. 423.
15.Witvrouw, A., Proost, J., Deweerdt, B., Roussel, P., and Maex, K., in Thin Films: Stresses and Mechanical Properties V, edited by Baker, S.P., Børgesen, P., Townsend, P.H., Ross, C.A., and Volkert, C.A. (Mater. Res. Soc. Symp. Proc. 356, Pittsburgh, 1995) p. 441.
16.Flinn, P.A. and Waychunas, G.A., in J. of Vac. Sci. and Techn. B6 (1988) p. 1749.
17.Greenebaum, B., Sauter, A.I., Flinn, P.A., and Nix, W.D., in Appl. Phys. Lett. 58 (1991) p. 1845.
18.Lee, J., Ma, Q., Marieb, T., Mack, A., Fujimoto, H., Flinn, P., Woolery, B., and Keyes, L., in Mater. Reliability in Microelectronics V (Mater. Res. Soc. Symp. Proc. 391, 1995).
19.Ma, Q., Chiras, S., Clarke, D.R., and Suo, Z., J. Appl. Phys., in press.
20.Jones, R.E., in Proc. 25th Ann. Int. Reliability Symp. (IEEE, 1987) p. 9.
21.Sauter, A.I. and Nix, W.D., in Thin Films: Stresses and Mechanical Properties II (Mater. Res. Soc. Symp. Proc. 188, Pittsburgh, 1990) p. 15.
22.Sauter, A.I. and Nix, W.D., in IEEE Trans. on Components, Hybrids, and Manufacturing Tech. 15 (1992) p. 594.
23.Mack, A.S. and Flinn, P., Thin Films: Stresses and Mechanical Properties V, edited by Baker, S.P., Borgesen, P., Townsend, P.H., Ross, C.A., and Volkert, C.A. (Mater. Res. Soc. Symp. Proc. 356, Pittsburgh, 1995) p. 465.
24.Nix, W.D. and Arzt, E., in Metall. Trans. A 23A (1992) p. 2007.
25.Nix, W. and Sauter, A.I., in Stress-Induced Phenomena in Metallization, edited by Li, C., Totta, P., and Ho, P. (Am. Inst. of Phys., New York, 1992) p. 89.
26.Marieb, T., PhD thesis, Stanford University, 1994.
27.Abe, H., Tanabe, S., Kondo, Y., and Ikubo, M., in Jpn. Soc. of Appl. Phys. (39th Spring Meeting, Extended Abstracts, April 1992) p. 658.
28.Nix, W. (private communication) 1994.
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MRS Bulletin
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