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Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

Published online by Cambridge University Press:  05 September 2019

Min Zhu ,
Kun Ren  and
Zhitang Song
Min Zhu
Affiliation:
Shanghai Institute of Microsystem and Information Technology, China; minzhu@mail.sim.ac.cn
Kun Ren
Affiliation:
Shanghai Institute of Microsystem and Information Technology, and Hangzhou Dianzi University, China; kun.ren.nick@outlook.com
Zhitang Song
Affiliation:
Shanghai Institute of Microsystem and Information Technology, China; ztsong@mail.sim.ac.cn
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Abstract

High-current switching performance of ovonic threshold switching (OTS) selectors have successfully enabled the commercialization of high-density three-dimensional (3D) stackable phase-change memory in Intel’s 3D Xpoint technology. This bridges the huge performance gap between dynamic random access memory (DRAM) and Flash. Similar to phase-change memory, OTS uses chalcogenide-based materials, but whereas phase-change memory reversibly switches between a high-resistance amorphous phase and a low-resistance crystalline phase, OTS freezes in the amorphous phase. In this article, we review recent developments in OTS materials and their performance in devices, especially current density and selectivity. Advantages and challenges of OTS devices in the integration with the phase-change memory are discussed. We introduce the evolution of theoretical models for explaining the OTS behavior, including thermal runaway, field-induced nucleation, and generation/recombination of charge carriers.

Keywords

memorydevicesamorphouscrystalmicroelectronics

Information

Type
Phase-Change Materials in Electronics and Photonics
Information
MRS Bulletin , Volume 44 , Issue 9: Phase-Change Materials in Electronics and Photonics , September 2019 , pp. 715 - 720
Copyright
Copyright © Materials Research Society 2019 

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