Skip to main content
×
×
Home

Topological memory using phase-change materials

  • Junji Tominaga (a1)
Abstract

Nonvolatile memories (NVMs) are key devices in computers to save a user’s information. Besides flash memory, several types of NVMs that use magnetoresistance, resistance change of metal oxides, and phase change of chalcogenide alloys have been studied. Among these, phase-change random-access memory (PC-RAM) is competitive from the viewpoint of switching speed, high durability, and scalability. In 2017, Intel and Micron Technology shipped commercial devices named Optane that use a phase-change material as storage class memories. Condensed-matter physicists have recently been attracted to phase-change materials because of their functionality as topological insulators. If the topological phase state is controllable and applied to PC-RAM, electron spin transfer and storage effects will be further available in addition to electrical resistance switching.

Copyright
References
Hide All
1.Bull, G.W., Kurdi, B.N., Scott, J.C., Lam, C.H., Gopalakrishnan, K., Shenoy, R.S., IBM J. Res. Dev. 52, 449 (2008).
2.Ando, K., Fujita, S., Yuasa, S., Suzuki, Y., Nakatani, Y., Miyazaki, T., Yoda, H., J. Appl. Phys. 115, 172607 (2014).
3.Ielmini, D., Lacaita, A.L., Mater. Today 14, 600 (2011).
4.Waser, R., Microelectron. Eng. 86, 1925 (2009).
5.Jameson, J.R., Gilbert, N., Koushan, F., Saenz, J., Wang, J., Hollimer, S., Kozicki, M., Appl. Phys. Lett. 100, 023505 (2012).
6.Intel, “Revolutionizing Memory and Storage,” Intel video, 3:28 (2017), https://www.intel.com/content/www/us/en/architecture-and-technology/intel-optane-technology.html.
7.Wuttig, M., Nat. Mater. 4, 265 (2005).
8.Yamada, N., Ohno, E., Akahira, N., Nishiuchi, K., Nagata, K., Takao, M., Jpn. J. Appl. Phys. 26, 61 (1987).
9.Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N., Takao, M., J. Appl. Phys. 69, 2849 (1991).
10.Raoux, S., Wuttig, M., Eds., Phase Change Materials (Springer, New York, 2009).
11.Russo, U., Ielmini, D., Redaelli, A., Lacaita, A.L., IEEE Trans. Electron Devices 55, 506 (2008).
12.Lee, J.I., Park, H., Cho, S.L., Park, Y.L., Bae, B.J., Park, J.H., Park, J.S., An, H.G., Bae, J.S., Ahn, D.H., Kim, Y.K.. Horii, H., Song, S.A., Shin, J.C., Park, S.Q., Kim, H.S., Chung, U-In., Moon, J.T., Ryu, B.I., Symp. VLSI Technol. Dig. Tech. Pap. (2007), p. 102.
13.Kim, I.S., Cho, S.L., Im, D.H., Cho, E.H., Kim, D.H., Oh, G.H., Ahn, D.H., Park, S.O., Nam, S.W., Moon, J.T., Chung, C.H., Symp. VLSI Technol. Dig. Tech. Pap. (2010), p. 203.
14.Tominaga, J., Wang, X., Kolobov, A.V., Fons, P., Phys. Status Solidi B 249, 1932 (2012).
15.Kolobov, A.V., Fons, P., Frenkel, A.I., Ankudinov, A.L., Tominaga, J., Uruga, T., Nat. Mater. 3, 703 (2004).
16.Tominaga, J., Fons, P., Kolobov, A., Shima, T., Chong, T.C., Zhao, R., Lee, H.K., Shi, L., Jpn. J. Appl. Phys. 47, 5763 (2008).
17.Tominaga, J., Simpson, R., Fons, P., Kolobov, A.V., Proc. Eur. Symp. Phase Change Ovonic Sci. (EPCOS 2010) (Politecnico di Milano, Milano, Italy, 2010), p. 54.
18.Simpson, R.E., Fons, P., Kolobov, A.V., Fukaya, T., Krbal, M., Yagi, T., Tominaga, J., Nat. Nanotechnol. 6, 501 (2011).
19.Sa, B., Zhou, J., Sun, Z., Tominaga, J., Ahuja, R., Phys. Rev. Lett. 109, 096802 (2012).
20.Hasan, M.Z., Kane, C.L., Rev. Mod. Phys. 82, 3045 (2010).
21.Qi, X.-L., Zhang, S.-C., Rev. Mod. Phys. 83, 1057 (2011).
22.Ando, Y., J. Phys. Soc. Jpn. 82, 102001 (2013).
23.Xiao, D., Chang, M.-C., Niu, Q., Rev. Mod. Phys. 82, 1959 (2010).
24.Bernevig, B.A., Hughes, T.L., Zhang, S.-C., Science 314, 1757 (2006).
25.Fu, L., Kane, C.L., Phys. Rev. B Condens. Matter 76, 045302 (2007).
26.Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., Zhang, S.-C., Nat. Phys. 5, 438 (2009).
27.Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., Bansil, A., Grauer, D., Hor, Y.S., Cave, R.J., Hasan, M.Z., Nat. Phys. 5, 398 (2009).
28.Chen, Y.L., Analytis, J.G., Chu, J.-H., Liu, Z.K., Mo, S.-K., Qi, X.L., Zhang, H.J., Lu, D.H., Dai, X., Fang, Z., Zhang, S.C., Fisher, I.R., Hussain, Z., Shen, Z.-X., Science 325, 178 (2009).
29.Hsieh, D., Xia, Y., Qian, D., Wray, L., Meier, F., Dil, J.H., Osterwalder, J., Patthey, L., Fedorov, A.V., Lin, H., Bansil, A., Grauer, D., Hor, Y.S., Cava, R.J., Hasan, M.Z., Phys. Rev. Lett. 103, 146401 (2009).
30.Yang, K., Setyawan, W., Wang, S., Nardelli, M.B., Curtarolo, S., Nat. Mater. 11, 614 (2012).
31.Lu, H.-Z., Shan, W.-Y., Yao, W., Niu, Q., Shen, S.-Q., Phys. Rev. B Condens. Matter 81, 115407 (2010).
32.Zhang, Y., He, K., Chang, C.-Z., Song, C.-L., Wang, L.-L., Chen, X., Jia, J.-F., Fang, Z., Dai, X., Shan, W.-Y., Shen, S.-Q., Niu, Q., Qi, X.-L., Zhang, S.-C., Ma, X.-C., Xue, Q.-K., Nat. Phys. 6, 584 (2010).
33.Xiu, F.-X., Zhao, T.-T., Chin. Phys. B 22, 096104 (2013).
34.Kolobov, A.V., Kim, D.J., Giussani, A., Fons, P., Tominaga, J., Calarco, R., Gruverman, A., APL Mater. 2, 066101 (2014).
35.Halasz, G.B., Balents, L., Phys. Rev. B Condens. Matter 85, 035103 (2012).
36.Tominaga, J., Kolobov, A.V., Fons, P., Nakano, T., Murakami, S., Adv. Mater. Interfaces 1, 1300027 (2014).
37.Saito, Y., Fons, P., Bolotov, L., Miyata, N., Kolobov, A.V., Tominaga, J., AIP Adv. 6, 045220 (2016).
38.Tominaga, J., Kolobov, A.V., Fons, P.J., Wang, X., Saito, Y., Nakano, T., Hase, M., Murakami, S., Herfort, J., Takagaki, Y., Sci. Technol. Adv. Mater. 16, 014402 (2015).
39.Sante, D.D., Barone, P., Bertacco, R., Picozzi, S., Adv. Mater. 25, 509 (2013).
40.Kim, J., Kim, J., Jhi, S.-H., Phys. Rev. B Condens. Matter 82, 201312 (2010).
41.Kim, J., Jhi, S.-H., Phys. Status Solidi B 249, 1874 (2012).
42.Takagaki, Y., Saito, Y., Tominaga, J., Appl. Phys. Lett. 108, 112102 (2016).
43.Tominaga, J., Saito, Y., Mitrofanov, K., Inoue, N., Fons, P., Kolobov, A.V., Nakamura, H., Miyata, N., Adv. Funct. Mater. 27, 1702243 (2017).
44.Momand, J., Wang, R., Boschker, J.E., Verheijin, M.A., Calarco, R., Kooi, B.J., Nanoscale 7, 19136 (2015).
45.Wang, R., Bragaglia, V.. Boschker, J.E., Calarco, R., Cryst. Growth Des. 16, 3596 (2016).
46.Lotnyk, A., Hilmi, I., Ross, U., Rauschenbach, B., Nano Res. 11, 1676 (2017).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Bulletin
  • ISSN: 0883-7694
  • EISSN: 1938-1425
  • URL: /core/journals/mrs-bulletin
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords

Metrics

Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed