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ZnO-Based Semiconductors as Building Blocks for Active Devices

Published online by Cambridge University Press:  31 January 2011

Toshio Kamiya  and
Masashi Kawasaki
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Abstract

This article provides a review of materials and devices of wide-bandgap oxide semiconductors based on ZnO, highlighting the nature of the chemical bond. The electronic structures of these materials are very different from those of conventional covalently bonded semiconductors, owing to the ionic nature of the chemical bonds. Therefore, one needs to design and optimize fabrication processes and structures of active devices containing such materials, taking into account the peculiar defect formation mechanisms. A variety of active devices that have clear advantages over the conventional ones have been demonstrated, for example, ultraviolet light-emitting diodes, quantum Hall devices, and transparent and flexible thin-film transistors with high electron mobility, paving the way for future applications. The reasons behind the successes identify future challenges in research on oxide semiconductors.

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Type
Research Article
Information
MRS Bulletin , Volume 33 , Issue 11: Whither Oxide Electronics? , November 2008 , pp. 1061 - 1066
Copyright
Copyright © Materials Research Society 2008

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