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1/f Noise in the Tunneling Current of thin Gate Oxides

Published online by Cambridge University Press:  15 February 2011

G. B. Alers ,
D. Monroe ,
K. S. Krisch ,
B. E. Weir  and
A. M. Chang
G. B. Alers
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
D. Monroe
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
K. S. Krisch
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
B. E. Weir
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
A. M. Chang
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
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Abstract

We have observed fluctuations in the tunneling current through 3.5 nm gate oxides with a 1/f power spectrum where f is the frequency. For voltages in the direct tunneling regime we lind an anomalous current dependence of the noise relative to previous observations of noise in thin oxides. We present a simplified model for the current noise in terms of fluctuations in a trap assisted tunneling current that exists in the oxide in addition to the direct tunneling current. Current noise appears to be a very sensitive probe of trap assisted tunneling and degradation in oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 311
Copyright
Copyright © Materials Research Society 1996

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