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2D Image Sensing Arrays with NIP Diodes

Published online by Cambridge University Press:  01 January 1993

C Van Berkel ,
N C Bird ,
C J Curling  and
I D French
C Van Berkel
Affiliation:
Philips Research Laboratories, Redhill, Surrey RH1 5HA,UK
N C Bird
Affiliation:
Philips Research Laboratories, Redhill, Surrey RH1 5HA,UK
C J Curling
Affiliation:
Philips Research Laboratories, Redhill, Surrey RH1 5HA,UK
I D French
Affiliation:
Philips Research Laboratories, Redhill, Surrey RH1 5HA,UK
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Abstract

2D image sensor arrays made with a-Si devices on glass over large area are of considerable interest as document scanners and in medical applications. We have made a test array containing a-Si NIP diodes for both the sensors and the active matrix switching devices. The issues of vertical crosstalk and image lag are discussed in relation to the device performance of the switching diode. The vertical crosstalk is controlled by the diode capacitance and the image lag by the high transient current in the device. We speculate that the transient current is a trap filling current in the deep states of the switching diode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 939
Copyright
Copyright © Materials Research Society 1993

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References

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