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3C-SiC Buffer Layers Converted from Si at a Low Temperature

Published online by Cambridge University Press:  10 February 2011

H. M. Liaw ,
S. Q. Hong ,
P. Fejes ,
D. Werho ,
H. Tompkins ,
S. Zollner ,
S. R. Wilson ,
K. J. Linthicum  and
R. F. Davis
H. M. Liaw
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, rwd720@email.mot.com
S. Q. Hong
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, rwd720@email.mot.com
P. Fejes
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, rwd720@email.mot.com
D. Werho
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, rwd720@email.mot.com
H. Tompkins
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, rwd720@email.mot.com
S. Zollner
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, rwd720@email.mot.com
S. R. Wilson
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, rwd720@email.mot.com
K. J. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

We have obtained single-crystal 3C-SiC films via conversion of the surface region of Si (111) and (100) wafers at 970 °C by reaction with C2H4 in an MBE reactor. The major defects in the films were clusters, voids, and misfit dislocations. Investigation by high resolution TEM images showed low lattice strains in the epitaxial layer due to the formation of 1 misfit dislocation for every 4 to 5 regular SiC planes that are bonded to Si at the interface. The clusters and voids often occurred in pairs. A model for forming the void-cluster pairs is suggested.

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References

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