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3-D Integration Technology for High Performance Detector Arrays

Published online by Cambridge University Press:  26 February 2011

Dorota Temple
Affiliation:
temple@rti.org, RTI International, Center for Materials and Electronics Technologies, 3021 Cornwallis Rd., Research Triangle Park, NC, 27709, United States
Christopher A. Bower
Affiliation:
cbower@rti.org, RTI International, Research Triangle Park, NC, 27709, United States
Dean Malta
Affiliation:
dmalta@rti.org, RTI International, Research Triangle Park, NC, 27709, United States
James E. Robinson
Affiliation:
JERobinson@drs-irtech.com, DRS Infrared Technologies, Dallas, TX, 75374, United States
Phillip R. Coffman
Affiliation:
PCoffman@drs-irtech.com, DRS Infrared Technologies, Dallas, TX, 75374, United States
Mark R. Skokan
Affiliation:
MRSkokan@drs-irtech.com, DRS Infrared Technologies, Dallas, TX, 75374, United States
Terry B. Welch
Affiliation:
TBWelch@drs-irtech.com, DRS Infrared Technologies, Dallas, TX, 75374, United States
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Abstract

This paper describes a technology for three-dimensional (3-D) integration of multiple layers of silicon integrated circuits. The technology promises to dramatically enhance on-chip signal processing capabilities of a variety of detector devices hybridized with Si electronics. The focus of the paper is on high performance infrared focal plane arrays based on HgCdTe, which offer the ultimate in infrared sensitivity and find application in high performance military systems. Performance data from test FPA devices with integrated multilayer Si stacks are discussed in this paper.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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