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Ab-Initio Calculation of the Optical Properties of Silicon Quantum Wires

Published online by Cambridge University Press:  15 February 2011

Stefano Ossicini ,
M. Biagini ,
C. M. Bertoni ,
G. Roma  and
O. Bisi
Stefano Ossicini
Affiliation:
INFM and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 1–41100, Modena, Italy
M. Biagini
Affiliation:
INFM and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 1–41100, Modena, Italy
C. M. Bertoni
Affiliation:
INFM and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 1–41100, Modena, Italy
G. Roma
Affiliation:
INFM and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 1–41100, Modena, Italy
O. Bisi
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, I-38050 Povo, Italy
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Abstract

We studied the effect of H, O passivation and inter-wire interaction on the optical properties of nanoscale Si wires. We find that wires with diameters as small as 10–25 Å are active in the visible range. Inter-wire interaction leads to the presence of localized states which lower the band gap energy. The presence of dangling bonds generates broad features in the infrared region. O-Si bonds reduce the absorption threshold. These results are important for the discussions concerning absorption and luminescence in porous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 63
Copyright
Copyright © Materials Research Society 1997

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References

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