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10 Tbit/inch2 Ferroelectric Data Storage with Offset Voltage Application Method

Published online by Cambridge University Press:  26 February 2011

Sunao Hashimoto  and
Yasuo CHO
Sunao Hashimoto
Affiliation:
sunao@riec.tohoku.ac.jp, R.I.E.C., Tohoku Univ., Dielectric Nano-Devices, 2-1-1 Katahira, Aoba-ku,, Sendai, Miyagi, 980-8577, Japan, +81-22-217-5526, +81-22-217-5526
Yasuo CHO
Affiliation:
cho@riec.tohoku.ac.jp, R.I.E.C., Tohoku Univ., Dielectric Nano-Devices, Japan
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Abstract

Ferroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch2 was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.

Keywords

ferroelectricnanoscalemicroelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-42
Copyright
Copyright © Materials Research Society 2006

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