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Application Fields of SEM/SPM Hybridsystems: Nanoscopic EBIC and Near Field CL

Published online by Cambridge University Press:  11 February 2011

Ralf Heiderhoff ,
Ingo Joachimsthaler  and
Ludwig J. Balk
Ralf Heiderhoff
Affiliation:
Lehrstuhl fuer Elektronik, Fachbereich Elektrotechnik & Informationstecnik, Bergische Universitaet Wuppertal, Fuhlrottstr. 10, 42097 Wuppertal, Germany
Ingo Joachimsthaler
Affiliation:
Lehrstuhl fuer Elektronik, Fachbereich Elektrotechnik & Informationstecnik, Bergische Universitaet Wuppertal, Fuhlrottstr. 10, 42097 Wuppertal, Germany
Ludwig J. Balk
Affiliation:
Lehrstuhl fuer Elektronik, Fachbereich Elektrotechnik & Informationstecnik, Bergische Universitaet Wuppertal, Fuhlrottstr. 10, 42097 Wuppertal, Germany
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Abstract

SPM/SEM-hybridsystems are more than only a combination of complementary microscopy techniques, because the used probes can simultaneously either be used as sensors, which give access to a vast variety of material properties, or as actuators, which can deliberately modify samples properties. The wide application field as well as flexibility is demonstrated exemplarily on techniques in microanalyses like nano-probing, cathodoluminescence, electron beam induced currents, and thermal analyses. These results provide an interesting perspective with respect to failure analyses and reliability of modern materials and devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G2.2
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Castle, J.E. and Zhdan, P.A., J. Phys. D: Appl. Phys. 30 722 (1997)Google Scholar
2. Helleputte van, H.R.J.R., Haddeman, T.B.J., Verheijen, M.J., and Baalbergen, J.-J., Micrelectronic Engineering 27 547 (1995)Google Scholar
3. Troyon, M., Pastré, D., Jouart, J.P., and Beaudoin, J.L., Ultramicroscopy 75 15 (1998)Google Scholar
4. Heiderhoff, R., Cramer, R.M., and Balk, L.J., IEEE Catalog 96 CH35825 366 (1996)Google Scholar
5. Cramer, R.M., Ebinghaus, V., Heiderhoff, R., and Balk, L.J., J. Phys. D: Appl. Phys. 31 1918 (1998)Google Scholar
6. Heiderhoff, R., Cramer, R.M., Sergeev, O.V., and Balk, L.J., Diamond and Related Materials 10 1647 (2001)Google Scholar
7. Nogales, E., Joachimsthaler, I., Heiderhoff, R., Piqueras, J., Balk, L.J., J Appl Phys 92 976 (2002)Google Scholar
8. Heiderhoff, R., Palaniappan, M.,. Phang, J.C.H., and Balk, L.J., Microelectronics Reliability 40 1383 (2000)Google Scholar
9. Altes, A., Joachimsthaler, I., Zimmermann, G., Heiderhoff, R., and Balk, L.J., IEEE Catalog 02TH8614 196 (2002)Google Scholar
10. Joachimsthaler, I., Heiderhoff, R., and Balk, L.J., to be published in Journal of Measurement Science and Technology (2002)Google Scholar