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Array of silicon field effect transistors to detect charges propagation in neurons circuit

Published online by Cambridge University Press:  03 August 2011

C. Delacour
Affiliation:
Institut Néel, CNRS-Université Joseph Fourier-Grenoble INP, BP 166, F-38042 Grenoble, France.
G. Bugnicourt
Affiliation:
Institut Néel, CNRS-Université Joseph Fourier-Grenoble INP, BP 166, F-38042 Grenoble, France.
G. Bres
Affiliation:
Institut Néel, CNRS-Université Joseph Fourier-Grenoble INP, BP 166, F-38042 Grenoble, France.
T. Crozes
Affiliation:
Institut Néel, CNRS-Université Joseph Fourier-Grenoble INP, BP 166, F-38042 Grenoble, France.
C. Villard
Affiliation:
Institut Néel, CNRS-Université Joseph Fourier-Grenoble INP, BP 166, F-38042 Grenoble, France.
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Abstract

We present transport properties of silicon nanowires field effect transistors realized on SOI substrates and their application to probe electrical activity of biological objects. Devices are sensitive to short and weak voltage pulses (ms, mV) applied in an electrolyte solution, allowing a future efficient detection of neuronal activity. For that purpose, the organized growth of neuronal cells along chosen patterns has been obtained, leading to an accurate coupling with silicon nanowire field effect transistors. Both network architectures, neural and semiconducting, have been designed to study some aspects of the propagation and the processing of information by the nervous system.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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