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Arsenic Incorporation Behavior in Nitrogen-rich GaNAs Alloys Synthesized by Metalorganic Chemical Vapor Deposition (MOCVD)

Published online by Cambridge University Press:  01 February 2011

M. Gherasimova ,
R. G. Wheeler ,
L. J. Guido ,
K. L. Chang  and
K. C. Hsieh
M. Gherasimova
Affiliation:
Department of Electrical Engineering, Yale University, P.O.Box 208284, New Haven, CT 06520
R. G. Wheeler
Affiliation:
Department of Electrical Engineering, Yale University, P.O.Box 208284, New Haven, CT 06520
L. J. Guido
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, 213 Holden Hall, Blacksburg, VA 24061
K. L. Chang
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, 1406 West Green St., Urbana, IL 61801
K. C. Hsieh
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, 1406 West Green St., Urbana, IL 61801
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Abstract

Homogeneous GaNAs alloy films containing 3 to 4 percent of arsenic anion fraction were synthesized by metalorganic chemical vapor deposition (MOCVD). Post-growth annealing resulted in the formation of GaAs precipitates of several nanometers in size embedded in the nitrogen-rich GaN(As) matrix, while as-grown ternary films exhibited no evidence of phase segregation. Band gap reduction due to alloying was observed by the optical transmission measurements, leading to an estimate for the bowing parameter of 25 eV in the films with the arsenic content of 3.5 %.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.41
Copyright
Copyright © Materials Research Society 2004

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References

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