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Atomic Oxidation of Ultra Thin SiGe Using Afterglow Oxygen Plasma
Published online by Cambridge University Press: 25 February 2011
Abstract
Microwave remote plasma oxidation system was used to study the oxidation of SiGe samples at low temperatures. The extent of Ge segregation at oxide/SiGe interface was investigated by using SIMS depth profiles. By comparing the segregation factors, the Ge segregation in the samples oxidized by atomic oxygen at 500 °C was much less than that in the samples oxidized without plasma at 950 °C. The Ge segregation has been largely suppressed by atomic oxygen oxidation at lower temperature.
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- Copyright © Materials Research Society 1993
References
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