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Atomically Sharp Artificially Reordered Structures in Si(100)

Published online by Cambridge University Press:  17 March 2011

P. Sen  and
J. Akhtar
P. Sen
Affiliation:
School of Physical Sciences, Jawaharlal Nehru University, New Delhi – 110067, India
J. Akhtar
Affiliation:
Microelectronics Technology Group, Semiconductor Devices Area, CEERI, Pilani-333031, India
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Abstract

The ability to organize materials in two or three dimensional structures forms the basis for approach worldwide to construct nanometer sized arrangements. Here we show the interaction of 200 MeV silver ions with a Si( 100) single crystal lattice which has been studied to look for defects with atomic resolution. Employing scanning tunnelling microscopy (STM), we demonstrate that the deposited energy is not stored as random defected arrangements at the irradiation site but as spatially extended structures at predetermined locations. These artificially reordered structures consist of random Si atoms, placed atomically sharp next to the single crystalline lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.37.1
Copyright
Copyright © Materials Research Society 2001

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