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Calculations on Multi-Pulse, Laser-Induced Diffusion andEvaporation Loss of Arsenic and Boron in Silicon

Published online by Cambridge University Press:  25 February 2011

H.S. Tan  and
C.K. Ong
H.S. Tan
Affiliation:
Department of Physics, National University of Singapore, Kent Ridge, Singapore 0511
C.K. Ong
Affiliation:
Department of Physics, National University of Singapore, Kent Ridge, Singapore 0511
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Abstract

A dopant redistribution model that has the dopant diffusion equationpartially solved analytically before engaging numerical method in its finalsolution was formulated. The model which included an evaporation lossmechanism for the near-surface dopants was then employed in the theoreticalfitting of the measured As and ? redistributed profiles in Si due to singleand ten-pulse laser irradiations. All the dopant profiles computed were ingood agreement with the measured SIMS data. The values of dopant diffusioncoefficients Dℓ in liquid Si that were deduced presently from thedopant profile fitting were (3.2 00B1 0.3) × 10-4-cm2s-1 for As and (4.0 00B1 0.4) × 10-4-cm2s-1 for ? respectively.Comparison to the reported experimental values of Dℓ was alsomade.

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References

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