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Capacitance Spectroscopy of Defects in a-SI:H/c-SI Heterostructures

Published online by Cambridge University Press:  15 February 2011

M. Rösch ,
T. Unold ,
R. Pointmayer  and
G.H. Bauer
M. Rösch
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, F.R.Germany
T. Unold
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, F.R.Germany
R. Pointmayer
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, F.R.Germany
G.H. Bauer
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, F.R.Germany
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Abstract

We investigate defects at the interface in heterodiodes of hydrogenated amorphous silicon and monocrystalline silicon by frequency and temperature dependent capacitance measurements. The interpretation of the experimental results is supported by numerical simulations of capacitance experiments via transient calculations of defect charging and decharging in the diodes. A defined variation of waver surface treatments prior to amorphous silicon deposition shows a clear correlation of interface defects determined by capacitance measurements with current-voltage characteristics.

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References

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