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Carrier-Density Fluctuation Noise and the Interface Trap Density in GaN/AlGaN HFETs

Published online by Cambridge University Press:  21 March 2011

Dmitri Kotchetkov  and
Alexander A. Balandin
Dmitri Kotchetkov
Affiliation:
Department of Electrical Engineering University of California at Riverside Riverside, California 92521, U.S.A
Alexander A. Balandin
Affiliation:
Department of Electrical Engineering University of California at Riverside Riverside, California 92521, U.S.A
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Abstract

The interface trap density NT is extracted from the experimental low-frequency noise data for GaN/AlGaN heterostructure field-effect transistors (HFETs). The trap density is determined based on the carrier-density fluctuation formalism. We show that the value of NT approximately defines the noise response of different GaN/AlGaN HFETs fabricated on the same wafer and it weakly depends on the gate bias. The dependence is due to the non-uniformity of the trap distribution. A model for computer simulation of the low-frequency noise in GaN devices is proposed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.13
Copyright
Copyright © Materials Research Society 2001

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References

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