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Characterization of an Ultra Thin Dense Hafnium Oxide Compact Layer with Electrochemical Impedance Spectroscopy for Dye-Sensitized Solar Cell Application

Published online by Cambridge University Press:  01 February 2011

Braden Bills
Affiliation:
blbills@jacks.sdstate.edu, South Dakota State University, Brookings, South Dakota, United States
Mariyappan Shanmugam
Affiliation:
Mariyappan.Shanmugam@sdstate.edu, South Dakota State University, Brookings, South Dakota, United States
Mahdi Farrokh Baroughi
Affiliation:
m.farrokhbaroughi@sdstate.edu, South Dakota State University, Brookings, South Dakota, United States
David Galipeau
Affiliation:
David.Galipeau@sdstate.edu, South Dakota State University, Brookings, South Dakota, United States
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Abstract

The performance of dye-sensitized solar cells (DSSCs) is limited by the back-reaction of photogenerated electrons from the photoelectrode back into the electrolyte solution. An atomic layer deposited (ALD) hafnium oxide (HfO2) ultra thin, a few nanometers, compact layer was grown on the surface of the transparent conducting oxide (TCO) and its effects on the performance of DSSCs were studied with dark and illuminated current-voltage and electrochemical impedance spectroscopy (EIS) measurements. Further, the theory of electron recombination at the TCO/electrolyte interface was developed and used to explain the improved DSSC performance with an ALD HfO2 compact layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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Characterization of an Ultra Thin Dense Hafnium Oxide Compact Layer with Electrochemical Impedance Spectroscopy for Dye-Sensitized Solar Cell Application
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Characterization of an Ultra Thin Dense Hafnium Oxide Compact Layer with Electrochemical Impedance Spectroscopy for Dye-Sensitized Solar Cell Application
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Characterization of an Ultra Thin Dense Hafnium Oxide Compact Layer with Electrochemical Impedance Spectroscopy for Dye-Sensitized Solar Cell Application
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