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Characterization of Pseudomorphic Hemt Structures by Modulation Spectroscopy

Published online by Cambridge University Press:  22 February 2011

A. Dimoulas ,
K. Zekentes  and
M. Androulidaki
A. Dimoulas
Affiliation:
University of Groningen, Department of Applied Physics, Nijenborgh 4, 9747 AG Groningen, The Netherlands
K. Zekentes
Affiliation:
Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1527, Heraklion 711 10, Crete, Greece
M. Androulidaki
Affiliation:
Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1527, Heraklion 711 10, Crete, Greece
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Abstract

Phototransmittance has been used to investigate several pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures, with different values of the electron density ns . A lineshape analysis of the ground state transition made it possible to estimate ns , at room temperature. A signal from the Fermi-edge singularity (a manybody effect), was observed at low temperatures and the dependence of its intensity on temperature and electron density was examined.

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