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Chemical Bonding and Si-SiO2 Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky
G. Lucovsky*
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, NC State University, Raleigh, NC 27695–8202
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Abstract

This paper addresses two aspects of the chemical bonding arrangements at Si-SiO2 interfaces that impact significantly on electrical performance and reliability of devices with ultrathin gate dielectrics with oxide equivalent thicknesses, toxeq, in the regime of direct tunneling; i.e., toxeq < 3 nm. These are i) minimization of suboxide bonding arrangements that contribute to roughness in an interfacial transition region, and ii) monolayer nitrogen atom incorporation.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 117
Copyright
Copyright © Materials Research Society 1997

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References

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