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Cleaning of SiO2: Differences Between Thermal and Deposited Oxides

Published online by Cambridge University Press:  15 February 2011

M. Ravkin ,
J. J. Farber ,
I. J. Malik ,
J. Zhang ,
A. J. Jensen ,
J. M. de Larios  and
W. C. Krusell
M. Ravkin
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
J. J. Farber
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
I. J. Malik
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
J. Zhang
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
A. J. Jensen
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
J. M. de Larios
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
W. C. Krusell
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
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Abstract

The effects described in this paper are specific to cleaning with mechanical brush scrubbing. Oxides, both thermally grown and deposited are common cleaning applications for mechanical brush scrubbing. Thermally grown oxides present higher final defect counts after scrubbing with deionized water compared to deposited oxides. In this paper we present our results on the cleaning of unpolished and polished oxide surfaces and show differences in these results to be dependent on the chemistry used for cleaning and the degree of hydrophilicity of the wafer surface.

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References

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