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Concentration-Dependent Hydrogen Diffusivity in a-Si:H

Published online by Cambridge University Press:  21 February 2011

Paulo V. Santos  and
Warren B. Jackson
Paulo V. Santos
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA94304
Warren B. Jackson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA94304
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Abstract

We present experimental evidence for an enhancement in hydrogen diffusivity in a-Si:H with hydrogen concentration. The concentration dependence is attributed to the saturation of the density of hydrogen traps consisting of Si-H bonds with increasing hydrogen concentration. As a consequence, hydrogen lifetime in mobile interstitial and/or bond-center sites is enhanced. The saturation occurs when the rate of trap filling by hydrogen injection from the plasma exceeds the rate of trap creation.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 425
Copyright
Copyright © Materials Research Society 1992

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References

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