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Contactless Measurements of Slip Lines Intentionally Introduced in Si Wafers During Rapid Thermal Processing

Published online by Cambridge University Press:  28 February 2011

A. Usami ,
H. Shiraki ,
H. Fujiwara ,
R. Abe ,
N. Osamura ,
M. Ichimura  and
T. Wada
A. Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, showa-ku, Nagoya 466, Japan
H. Shiraki
Affiliation:
Mitsubishi Material Co., Ltd., 1-297 kitabukuro-cho, ohmiya 330, Japan
H. Fujiwara
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, showa-ku, Nagoya 466, Japan
R. Abe
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, showa-ku, Nagoya 466, Japan
N. Osamura
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, showa-ku, Nagoya 466, Japan
M. Ichimura
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, showa-ku, Nagoya 466, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, showa-ku, Nagoya 466, Japan
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Abstract

The slip lines introduced in Si wafers during rapid thermal processing (RTP) were revealed with focused reflectance microwave probe (RMP) method. The signal intensity of RMP which is related to optically injected excess carrier concentration decreases at slip lines. The region in which the signal intensity decreased is in good agreement with results of X-ray topography and theoretical analysis considering thermal stress caused by temperature drop at the wafer periphery during RTP. According these results, it is considered that carrier lifetime is decreased by slip dislocations which are effective recombination centers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 215
Copyright
Copyright © Materials Research Society 1991

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