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Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si(100)

Published online by Cambridge University Press:  01 February 2011

Gerd Norga
Affiliation:
gerd.norga@como.polimi.it, Politecnico di Milano, Department of Physics, Via Anzani 42, Como, N/A, I 22100, Italy
Chiara Marchiori
Affiliation:
chi@zurich.ibm.com, IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Christophe Rossel
Affiliation:
rsl@zurich.ibm.com, IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Alexandre Guiller
Affiliation:
ale@zurich.ibm.com, IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Jean-Pierre Locquet
Affiliation:
loc@zurich.ibm.com, IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Heinz Siegwart
Affiliation:
hsg@zurich.ibm.com, IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Daniele Caimi
Affiliation:
dca@zurich.ibm.com, IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
Jean Fompeyrine
Affiliation:
jfo@zurich.ibm.com, IBM Research GmbH, Rueschlikon, N/A, CH8803, Switzerland
J. W. Seo
Affiliation:
jinwon.seo@epfl.ch, Ecole Polytechnique Federale de Lausanne, Ecublens, N/A, CH1015, Switzerland
Christel Dieker
Affiliation:
Christel.Dieker@epfl.ch, Ecole Polytechnique Federale de Lausanne, Ecublens, N/A, CH1015, Switzerland
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Abstract

In this paper, we point out the critical role of oxygen stoichiometry in the solid state epitaxy process used for obtaining 5 A EOT in SrTiO3 gate dielectrics on Si. Incomplete oxygenation of the TiO2 fraction of the amorphous SrO.TiO2 film enhances the inherent tendency of TiO2 to react with Si to yield TiSi2 and SiO2. O2 excess is needed to obtain a crystalline interface after UHV crystallization. The solid state epitaxy process results in heavily oxygen deficient films, whose insulating properties can be recovered by an atomic oxygen treatment.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si(100)
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Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si(100)
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Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si(100)
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