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Correlation Length Scaling During the Early Stages of Epitaxial Growth

Published online by Cambridge University Press:  25 February 2011

Niaz Haider ,
Mark R. Wilby  and
Dimitri D. Vvedensky
Niaz Haider
Affiliation:
The Blacketi Laboratory, Imperial College, London SW7 2BZ, United Kingdom
Mark R. Wilby
Affiliation:
The Blacketi Laboratory, Imperial College, London SW7 2BZ, United Kingdom Department of Electrical and Electronic Engineering, University College London, London WC1E 7JE, United Kingdom
Dimitri D. Vvedensky
Affiliation:
The Blacketi Laboratory, Imperial College, London SW7 2BZ, United Kingdom
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Abstract

We have calculated the height-height correlation function by means of Monte Carlo simulations of a solid-on-solid model. These simulations reveal that the position and sizes of the islands formed during the first half-monolayer are highly correlated, a feature which has also been noted in recent x-ray studies of growth by OMCVD. This morphology results in the emergence of a characteristic length, ℓ, in the correlation function, which is found to obey the scaling law ℓ = (D)/J)γ, where D is the diffusion length, and J is the deposition flux. The value of the exponent γ varies with coverage and depends on the growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 135
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Neave, J.H., Joyce, B.A., Dobson, P.J. and Norton, N., Appl. Phys. A 31, 1 (1983).CrossRefGoogle Scholar
2. Van Hove, J.M., Lent, C.S., Pukite, P.R. and Cohen, P.I., J. Vac. Sci. Technol. B 3, 741 (1983).CrossRefGoogle Scholar
3. Neave, J.H., Dobson, P.J., Joyce, B.A. and Zhang, J., Appl. Phys. Lett. 47, 100 (1985).CrossRefGoogle Scholar
4. Shitara, T., Vvedensky, D.D., Wilby, M.R., Zhang, J., Neave, J.H. and Joyce, B.A., Appl. Phys. Lett. 60, 1504 (1992).CrossRefGoogle Scholar
5. Weeks, J.D. and Gilmer, G.H., Adv. Chem. Phys. 40, 157 (1979).CrossRefGoogle Scholar
6. Clarke, S. and Vvedensky, D.D., Phys. Rev. Lett. 58, 2235 (1987).Google Scholar
7. Fuoss, P.H., Kisker, D.W., Lamelas, F.J., Stephenson, G.B., Imperatori, P., and Bren-nan, S., Phys. Rev. Lett. 69, 2791 (1992).CrossRefGoogle Scholar
8. Shitara, T., Vvedensky, D.D., Wilby, M.R., Zhang, J., Neave, J.H. and Joyce, B.A., Phys. Rev. B 46, 6815 (1992).Google Scholar