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Correlation of In and Ex Situ Stress to Microstructures during Al-Induced Crystallization of PECVD Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

S. Ray ,
Y.G. Lian ,
V. Sriram ,
D. J. Tucker  and
G. Z. Pan
S. Ray
Affiliation:
Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095
Y.G. Lian
Affiliation:
Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095
V. Sriram
Affiliation:
Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095
D. J. Tucker
Affiliation:
Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095
G. Z. Pan
Affiliation:
Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095
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Abstract

We studied the correlation of in and ex situ stress to microstructures during Al-induced crystallization for structures of Al on top (AOT) and Al on bottom (AOB) of amorphous Si (a-Si) on 3000 Å SiO2 coated on Si wafers and found that a-Si deposited on PECVD SiO2 and Al increases the stress compressively, and Al deposited on PECVD SiO2 and on a-Si decreases the stress tensilely. In addition, the stress of AOB structures is in general less than that of AOT structures. Correlation of stress to microstructures indicated that the difference in microstructures between AOT and AOB results from the nature of the layer structures themselves. By using modified Stoney's equation, the lower stress of AOB structures than AOT could be explained with existence of oxide between a-Si and Al for both AOT and AOB structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A6.1
Copyright
Copyright © Materials Research Society 2005

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References

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