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Correlations of Changes in ESR and PL with Light Soaking in a-Si:H

Published online by Cambridge University Press:  21 February 2011

Mihoko Yoshida  and
P.C. Taylor
Mihoko Yoshida
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
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Abstract

Light-induced changes in electron spin resonance (ESR) signal intensity and photoluminescence (PL) intensity in device quality a-Si:H are compared. Different dependences on the light soaking temperature for the ESR spin density and the PL peak intensity at ∼ 1.3 eV suggest that a non-radiative process, that does not directly involve neutral dangling bonds, influences the photoluminescence at the peak. After light soaking no clear increase of the peak in the low energy luminescence region (∼ 0.8 eV) was observed even at higher temperatures (> 200 K), where the low energy luminescence band is relatively more important.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 347
Copyright
Copyright © Materials Research Society 1992

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References

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