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Deep Luminescence from ‘Relaxed’ Si1−xGex Epitaxial Layers

Published online by Cambridge University Press:  22 February 2011

Gordon Davies ,
Victor Higgs ,
Richard Kubiak ,
Adrian Powell ,
Terry Whall  and
Evan Parker
Gordon Davies
Affiliation:
Department of Physics, King's College London, Strand, London WC2R 2LS, UK
Victor Higgs
Affiliation:
Department of Physics, King's College London, Strand, London WC2R 2LS, UK
Richard Kubiak
Affiliation:
Department of Physics, Warwick University, Coventry CV4 7AL, UK
Adrian Powell
Affiliation:
Department of Physics, Warwick University, Coventry CV4 7AL, UK
Terry Whall
Affiliation:
Department of Physics, Warwick University, Coventry CV4 7AL, UK
Evan Parker
Affiliation:
Department of Physics, Warwick University, Coventry CV4 7AL, UK
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Abstract

In MBE Si1−xGex which is grown to thicknesses greater than the critical thickness hc , the dislocation-related luminescence peaks Dl and D2 have energies which are independent of x up to x ≈ 0.3, and then decrease, as observed in LPE Si1−xGex. In MBE Si1−xGex layers grown to thicknesses less than hc , post-growth annealing produces dramatic changes in the luminescence, giving spectra as from relaxed alloy, even though the relaxation determined by X-rays is negligible. These results establish photoluminescence as a sensitive diagnostic tool for detecting dislocations in Si1−xGe*.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 321
Copyright
Copyright © Materials Research Society 1991

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References

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