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Defects in MBE-grown Silicon Epilayers Studied with Variable-Energy Positrons

Published online by Cambridge University Press:  25 February 2011

P.J. Simpson ,
P.J. Schultz ,
I.V. Mitchell ,
T.E. Jackman  and
G.C. Aers
P.J. Simpson
Affiliation:
Dept. of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada.
P.J. Schultz
Affiliation:
Dept. of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada.
I.V. Mitchell
Affiliation:
Dept. of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada.
T.E. Jackman
Affiliation:
Microstructural Sciences Laboratory, National Research Council of Canada, Ottawa, Ontario K1A OR6, Canada.
G.C. Aers
Affiliation:
Microstructural Sciences Laboratory, National Research Council of Canada, Ottawa, Ontario K1A OR6, Canada.
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Abstract

Few non-destructive techniques are available which provide information regarding defect type, concentration and depth distribution in semiconductors. The variable-energy positron beam technique has recently demonstrated a sensitivity to near surface defects and impurities at low defect concentrations. In the present study, intrinsic silicon (100) epilayers of ~3000 Å thickness grown by MBE at different temperatures were examined by this method for evidence of changing defect concentration and type.

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