Hostname: page-component-54dcc4c588-wlffp Total loading time: 0 Render date: 2025-09-17T05:04:29.208Z Has data issue: false hasContentIssue false
  • English
  • Français

Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor

Published online by Cambridge University Press:  31 January 2011

Yuki Watabe ,
Taku Tajima  and
Tohru Nakamura
Yuki Watabe
Affiliation:
yuki.watabe.no@gs-eng.hosei.ac.jp, Hosei University, Tokyo, Japan
Taku Tajima
Affiliation:
taku.tajima.km@gs-eng.hosei.ac.jp, Hosei University, Tokyo, Japan
Tohru Nakamura
Affiliation:
tohru@hosei.ac.jp, Hosei University, Tokyo, Japan
Get access

Abstract

Degradation of current gain for ion implanted 4H-SiC bipolar junction transistor is described. The influence of bandgap-narrowing to the collector and base currents of the transistor was investigated using ISE-TCAD simulator. Simulated results show good agreement with the measured results, which show that the common emitter current gain of 3.9 is obtained at a maximum base concentration of 2×1017/cm3 and a maximum emitter concentration of 4×1019/cm3 for ion implanted 4H-SiC BJTs.

Keywords

Scdevicessimulation

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Gao, Yan, Huang, Alex Q., Zhang, Qingchun, Krishnaswami, Sumi, and Agarwal, Anant K., “Analysis of operational degradation of SiC BJTS characteristics,”in Proc. ISPSD, 2007, pp. 121–124 10.1109/ISPSD.2007.4294947Google Scholar
2. Gao, Yan, Huang, Alex Q., Chen, Bin, Agarwal, Anant K., Krishnaswami, Sumi, and Scozzie, Charles, “Analysis of SiC BJT RBSOA,” in Proc. ISPSD, 2006 Google Scholar
3. Agarwal, Anant, Krishnaswami, Sumi, Richmond, James, Capell, Craig, Ryu, Sei-Hyung, Palmour, John W., Balachandran, Santosh, Chow, T. Paul, Bayne, Stephen, Geil, Bruce, Scozzie, Charles, and Jones, Kenneth A., “Evolution of the 1600V, 20A, SiC bipolar junction transistors,” in Proc. ISPSD, 2005 10.1109/WCT.2004.240154Google Scholar
4. Tajima, Taku, Uciumi, Satoshi, Tsukamoto, Kenta, Takenaka, Kazumasa, Satoh, Masataka, Nakamura, Tohru, “Effect of base impurity concentration on DC characteristics of double ion implanted 4H-SiC BJTs,” in Proc. Mater. Sci. Forum, 2008 10.1557/PROC-1069-D07-20Google Scholar
5. Schaffer, W. J. et al, MRS Symposium Proceedings, Diamond, SiC and Nitride Wide Bandgap Semiconductors, 339,.595–600, 1994 Google Scholar
6. Lindefelt, U., Doping-induced band edge displacements and band gap narrowing in 3C--, 4H-, 6H--SiC, and Si. J. Appl. Phys. 84, 5 (1998), 2628–2637 10.1063/1.368374Google Scholar
7. Arora, N.D., Hauser, J.R., and Roulston, D.J., IEEE Trans. on Electron Devices, 29, 292–295, 1982 10.1109/T-ED.1982.20698Google Scholar
8. Canali, C., Majni, G., Minder, R., and Ottaviani, G., IEEE Trans. on Electrons Devices, 22, 1045–1047, 1975 10.1109/T-ED.1975.18267Google Scholar
9. Ikeda, M., Matsunami, H., Tanaka, T. Site effect on the impurity levels in 4H, 6H, and 15R SiC. Phys. Rev. B 22, 6 (1980), 2842–2854 Google Scholar