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The Dependence of the Magnetic Properties of GaMnN on Codoping by Mg and Si

Published online by Cambridge University Press:  01 February 2011

Mason J. Reed
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh NC 27695–7907
M. Oliver Luen
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh NC 27695–7911
Meredith L. Reed
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh NC 27695–7911
Salah M. Bedair
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh NC 27695–7911
Fevzi Erdem Arkun
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh NC 27695–7907
Erkan Acar Berkman
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh NC 27695–7907
Nadia A. Elmasry
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh NC 27695–7907
John Zavada
Affiliation:
US Army Research Office, Durham NC 27709
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Abstract

The magnetic properties of GaMnN, grown by metalorganic chemical vapor deposition, depend on the addition of dopants; where undoped materials are ferromagnetic, and n -type (Si-doped) and p -type (Mg-doped) films are either ferromagnetic or paramagnetic depending on dopant concentration. The ferromagnetism of this material system seems correlated to Fermi level position, and is observed only when the Fermi level is within or close to the Mn energy band. This allows ferromagnetism-mediating carriers to be present in the Mn energy band. The current results exclude precipitates or clusters as the origin of room temperature ferromagnetism in GaMnN.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019 (2000).Google Scholar
2. Reed, M.L., Elmasry, N.A., Stadelmaier, H.H., Ritums, M.K., Reed, M.J., Parker, C.A. and Bedair, S.M., Appl. Phys. Lett. 79, 3473 (2001)Google Scholar
3. Reed, M.L., Ritums, M.K., Stadelmaier, H.H., Reed, M.J., Parker, C.A., Bedair, S.M., Elmasry, N.A., Material Letters, 51, 500 (2001)Google Scholar
4. Thaler, G., Frazier, R., Gila, B., Stapelton, J., Davidson, M., Abernathy, C. R., Pearton, S. J., Serge, C., Appl. Phys. Lett. 84, 2578 (2004)Google Scholar
5. Sonoda, S., Shimizu, S., Sasaki, T., Yamamoto, Y. and Hori, H., J. Cryst. Growth, 237–239, 358 (2002).Google Scholar
6. Kronik, L., Jain, M., Chelikowsky, J. R., Phys. Rev. B, 66, 041203 (2002).Google Scholar